PESD24VS4UD T/R NXP Semiconductors, PESD24VS4UD T/R Datasheet - Page 3

• Manufacturer Part Number: PESD24VS4UD T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD24VS4UD T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 25.5 V
• Clamping Voltage: 52 V
• Operating Voltage: 24 V
• Peak Surge Current: 4 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.7(Max) mm W x 3.1(Max) mm L
• Package / Case: TSOP-6
• Peak Pulse Power Dissipation: 200 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD24VS4UD,115

NXP Semiconductors
5. Limiting values
PESDXS4UD_SER_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 6.
[1]
[2]
Table 7.
Symbol
P
I
T
T
T
Symbol
V
Standard
IEC 61000-4-2; level 4 (ESD)
HBM MIL-STD-883; class 3
PP
j
amb
stg
PP
ESD
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4 or 6 to 2 or 5
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1, 3, 4 or 6 to 2 or 5
Parameter
electrostatic discharge voltage
Limiting values
ESD maximum ratings
ESD standards compliance
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
PESDxS4UD series
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
PESD3V3S4UD
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
Rev. 02 — 21 August 2009
Quadruple ESD protection diode arrays in a SOT457 package
Conditions
t
t
p
p
= 8/20 s
= 8/20 s
Conditions
IEC 61000-4-2
(contact discharge)
HBM MIL-STD-883
Conditions
> 15 kV (air); > 8 kV (contact)
> 10 kV
PESDxS4UD series
[1][2]
[1][2]
Min
-
-
-
-
-
-
-
[1][2]
65
65
Min
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
200
20
20
10
6
4
150
+150
+150
Max
30
30
30
30
23
10
Unit
W
A
A
A
A
A
C
C
C
Unit
kV
kV
kV
kV
kV
kV
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