PESD3V3L2UM T/R NXP Semiconductors, PESD3V3L2UM T/R Datasheet - Page 7

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PESD3V3L2UM T/R

Manufacturer Part Number
PESD3V3L2UM T/R
Description
TVS Diode Arrays DIODE ARRAY ESD TAPE-7
Manufacturer
NXP Semiconductors
Series
PESDxL2UMr
Datasheet

Specifications of PESD3V3L2UM T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Channels
2 Channels
Breakdown Voltage
5.32 V
Clamping Voltage
13 V
Operating Voltage
3.3 V
Peak Surge Current
3 A
Mounting Style
SMD/SMT
Termination Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
0.62 (Max) mm W x 1.02 (Max) mm L
Package / Case
SOT-883
Peak Pulse Power Dissipation
30 W
Factory Pack Quantity
10000
Part # Aliases
PESD3V3L2UM,315
NXP Semiconductors
PACKAGE OUTLINE
2005 May 23
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
Low capacitance double ESD protection
diode
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
UNIT
mm
VERSION
OUTLINE
SOT883
A
0.50
0.46
(1)
max.
0.03
e
A
1
b
0.20
0.12
2
1
b
IEC
0.55
0.47
b
1
L
0.62
0.55
D
1.02
0.95
E
JEDEC
e 1
E
0.35
e
REFERENCES
0.65
e
1
L 1
0.30
0.22
SC-101
L
JEITA
7
3
0.30
0.22
L
A 1
D
1
b 1
A
0
PROJECTION
EUROPEAN
PESDxL2UM series
scale
0.5
Product data sheet
ISSUE DATE
03-02-05
03-04-03
1 mm
SOT883

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