IS42S32160C-6BL-TR ISSI, Integrated Silicon Solution Inc, IS42S32160C-6BL-TR Datasheet - Page 40

• Manufacturer Part Number: IS42S32160C-6BL-TR
• Description: IC SDRAM 512MBIT 166MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32160C-6BL-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: WBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 300mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32160C
38
Random Row Write (Interleaving Banks) (Burst Length=8, CAS# Latency=2)
BS0,1
CAS#
ADD
DQM
RAS#
WE#
CKE
CLK
CS#
A10
DQ
* t
High
WR
Hi-Z
Command
Activate
Bank A
> t
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
WR
t
RCD
(min.)
t
CK2
Command
Bank A
Write
DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1
CAx
Command
Activate
Bank B
RBx
RBx
Command
Bank B
t
WR*
Write
CBx
Precharge
Command
Bank A
t
DBx2 DBx3 DBx4 DBx5 DBx6
RP
Command
Activate
Bank A
RAy
RAy
Integrated Silicon Solution, Inc.
DBx7
Command
Bank A
t
Write
WR*
DAy0 DAy1 DAy2
CAy
Precharge
Command
Bank B
DAy3
DAy4
Rev. B
01/22/09