IS42S32160C-6BL-TR ISSI, Integrated Silicon Solution Inc, IS42S32160C-6BL-TR Datasheet - Page 58

• Manufacturer Part Number: IS42S32160C-6BL-TR
• Description: IC SDRAM 512MBIT 166MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32160C-6BL-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: WBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 300mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32160C
58
Precharge Termination of a Burst (Burst Length=4,8 or Full Page, CAS# Latency=3)
BS0,1
CAS#
ADD
RAS#
DQM
WE#
CKE
CLK
CS#
A10
DQ
High
Command
Activate
Bank A
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
CK3
Write Data
is masked
Command
Bank A
DAx0
Write
CAx
DAx1
t
WR
Precharge
Command
Bank A
Precharge Terminati o n
of a Write Burst
t
RP
Command
Activate
Bank A
RAy
RAy
Command
Bank A
CAy
Read
Precharge
Command
Bank A
Ay0
Integrated Silicon Solution, Inc.
Ay1
t
RP
Ay2
Command
Activate
Bank A
RAz
RAz
Precharge Terminati o n
of a Read Burst
Rev. B
01/22/09