IS42S32160C-6BL-TR ISSI, Integrated Silicon Solution Inc, IS42S32160C-6BL-TR Datasheet - Page 45

• Manufacturer Part Number: IS42S32160C-6BL-TR
• Description: IC SDRAM 512MBIT 166MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32160C-6BL-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: WBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 300mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32160C
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
01/22/09
Interleaved Column Write Cycle (Burst Length=4, CAS# Latency=3)
BS0,1
ADD
RAS#
CAS#
DQM
CKE
CS#
WE#
CLK
A10
DQ
Hi-Z
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Command
Activate
Bank A
RAx
RAx
t
CK3
t
RRD
t
RCD
> t
RRD(min)
Command
Bank A
Write
DAx0 DAx1 DAx2 DAx3
CAx RBw
Command
Activate
Bank B
RBw
Command
Bank B
DBw0 DBw1 DBx0 DBx1
CBw
Write
Command
Bank B
Write
CBx
Command
Bank B
Write
DBy0
CBy
DBy1 DAy0
Command
Bank A
Write
CAy
DAy1
Command
Bank B
t
DBz0 DBz1 DBz2 DBz3
Write
CBz
WR
Precharge
Command
Bank A
t
RP
t
WR(min)
Precharge
Command
Bank B
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