IS61NLF51236-7.5TQI-TR ISSI, Integrated Silicon Solution Inc, IS61NLF51236-7.5TQI-TR Datasheet - Page 11

• Manufacturer Part Number: IS61NLF51236-7.5TQI-TR
• Description: IC SRAM 18MBIT 117MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLF51236-7.5TQI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 117MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61NLF25672/IS61NVF25672
IS61NLF51236/IS61NVF51236
IS61NLF102418/IS61NVF102418
LINEAR BURST ADDRESS TABLE
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however,
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. C
12/08/08
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance
circuit.
Symbol
T
P
I
V
V
OUT
STG
D
IN
IN
, V
A1', A0' = 1,1
OUT
Parameter
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to V
Voltage Relative to V
for Address and Control Inputs
0,0
1,0
(1)
SS
SS
for
for I/O Pins
(MODE = V
0,1
1-800-379-4774
SS
)
–0.5 to V
–65 to +150
–0.5 to 4.6
Value
100
1.6
DDQ
+ 0.5
Unit
mA
°C
W
V
V
11