IS61NLF51236-7.5TQI-TR ISSI, Integrated Silicon Solution Inc, IS61NLF51236-7.5TQI-TR Datasheet - Page 26

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IS61NLF51236-7.5TQI-TR

Manufacturer Part Number
IS61NLF51236-7.5TQI-TR
Description
IC SRAM 18MBIT 117MHZ 100TQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61NLF51236-7.5TQI-TR

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
18M (512K x 36)
Speed
117MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.465 V
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61NLF51236-7.5TQI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61NLF25672/IS61NVF25672
IS61NLF51236/IS61NVF51236
IS61NLF102418/IS61NVF102418
TAP Electrical Characteristics Over the Operating Range
Notes:
TAP AC ELECTRICAL CHARACTERISTICS
Notes:
1. t
2. Test conditions are specified using the load in TAP AC test conditions. t
26
Symbol
V
V
V
V
V
V
I
1. All Voltage referenced to Ground.
2. Overshoot: V
X
Symbol Parameter
t
f
t
t
t
t
t
t
t
t
t
t
OH1
OH2
OL1
OL2
IH
IL
CS
TCYC
TF
TH
TL
TMSS
TDIS
CS
TMSH
TDIH
CH
TDOV
TDOX
Undershoot: V
Power-up: V
and t
CH
refer to the set-up and hold time requirements of latching data from the boundary scan register.
TCK Clock cycle time
TCK Clock frequency
TCK Clock HIGH
TCK Clock LOW
TMS setup to TCK Clock Rise
TDI setup to TCK Clock Rise
Capture setup to TCK Rise
TMS hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture hold after Clock Rise
TCK LOW to TDO valid
TCK LOW to TDO invalid
IH
IH
IL
< 2.6V and V
(AC) ≤ V
(AC)
Parameter
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
0.5V for t
DD
+1.5V for t
DD
< 2.4V and V
t
TCYC
t
/2,
TCYC
DDQ
/2,
< 1.4V for t < 200 ms.
Integrated Silicon Solution, Inc. — www.issi.com —
(1,2)
Test Conditions
(OVER OPERATING RANGE)
V
I
I
SS
OH
OH
I
I
OL
OL
≤ V I ≤ V
= –2.0 mA
= –100 μA
= 2.0 mA
= 100 μA
R
/t
F
= 1 ns.
(1,2)
DDQ
Min.
100
40
40
10
10
10
10
10
10
0
Max.
10
20
Min.
–0.3
–10
1.7
2.1
1.7
V
DD
Max.
MHz
0.7
0.2
0.7
Unit
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
+0.3
1-800-379-4774
Units
12/08/08
μA
Rev. C
V
V
V
V
V
V

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