IS61NLF51236-7.5TQI-TR ISSI, Integrated Silicon Solution Inc, IS61NLF51236-7.5TQI-TR Datasheet - Page 8

• Manufacturer Part Number: IS61NLF51236-7.5TQI-TR
• Description: IC SRAM 18MBIT 117MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLF51236-7.5TQI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 117MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61NLF25672/IS61NVF25672
IS61NLF51236/IS61NVF51236
IS61NLF102418/IS61NVF102418
STATE DIAGRAM
SYNCHRONOUS TRUTH TABLE
Notes:
1. "X" means don't care.
2. The rising edge of clock is symbolized by ↑
3. A continue deselect cycle can only be entered if a deselect cycle is executed first.
4. WE = L means Write operation in Write Truth Table.
5. Operation finally depends on status of asynchronous pins (ZZ and OE).
8
Operation
Not Selected
Not Selected
Not Selected
Not Selected Continue
Begin Burst Read
Continue Burst Read
NOP/Dummy Read
Dummy Read
Begin Burst Write
Continue Burst Write
NOP/Write Abort
Write Abort
Ignore Clock
WE = H means Read operation in Write Truth Table.
READ
BURST
READ
BURST
READ
BEGIN
BURST
External Address
External Address
External Address
READ
Current Address
Next Address
Next Address
Next Address
Next Address
Address
Used
N/A
N/A
N/A
N/A
N/A
(1)
WRITE
DS
DS
READ
DS
Integrated Silicon Solution, Inc. — www.issi.com —
CE
CE
CE
CE
CE
H
X
X
X
X
X
X
X
X
L
L
L
L
DESELECT
WRITE
READ
CE2
X
X
X
H
X
H
X
H
X
H
X
X
L
CE
CE
CE2
CE
CE
X
X
H
X
X
X
X
X
X
L
L
L
L
WRITE
BURST
DS
ADV
DS
H
H
H
H
H
X
L
L
L
L
L
L
L
READ
WE
WE
WE
WE
WE
X
X
X
X
H
X
H
X
X
X
X
L
L
BURST
WRITE
BEGIN
BURST
WRITE
BW
BW
BW
BWx
BW
X
X
X
X
X
X
X
X
H
H
X
L
L
WRITE
OE
OE
OE
OE
OE
X
X
X
X
H
H
X
X
X
X
X
L
L
BURST
WRITE
CKE
CKE
CKE
CKE
CKE
1-800-379-4774
H
L
L
L
L
L
L
L
L
L
L
L
L
CLK
12/08/08
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
Rev. C