PESD3V3L4UW T/R NXP Semiconductors, PESD3V3L4UW T/R Datasheet

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PESD3V3L4UW T/R

Manufacturer Part Number
PESD3V3L4UW T/R
Description
TVS Diode Arrays DIODE ARRAY ESD TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD3V3L4UW T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Breakdown Voltage
5.32 V
Clamping Voltage
12 V
Operating Voltage
3.3 V
Peak Surge Current
3 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.3 (Max) mm W x 1.7 (Max) mm L
Package / Case
SOT-665
Peak Pulse Power Dissipation
30 W
Factory Pack Quantity
4000
Part # Aliases
PESD3V3L4UW,115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode
arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to
four signal lines from the damage caused by ESD and other transients.
Table 1.
I
I
I
I
I
I
I
Type number
PESD3V3L4UF
PESD5V0L4UF
PESD3V3L4UG
PESD5V0L4UG
PESD3V3L4UW
PESD5V0L4UW
PESDxL4UF; PESDxL4UG;
PESDxL4UW
Low capacitance unidirectional quadruple ESD protection
diode arrays
Rev. 04 — 28 February 2008
ESD protection of up to four lines
Low diode capacitance
Max. peak pulse power: P
Low clamping voltage: V
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Product overview
Package
NXP
SOT886
SOT886
SOT353
SOT353
SOT665
SOT665
CL
PP
= 12 V
= 30 W
JEITA
-
-
SC-88A
SC-88A
-
-
I
I
I
I
I
I
I
Ultra low leakage current: I
ESD protection up to 20 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
Communication systems
Portable electronics
Subscriber Identity Module (SIM) card
protection
JEDEC
MO-252
MO-252
-
-
-
-
Package configuration
leadless ultra small
leadless ultra small
very small
very small
ultra small and flat lead
ultra small and flat lead
Product data sheet
PP
RM
= 2.5 A
= 5 nA

Related parts for PESD3V3L4UW T/R

PESD3V3L4UW T/R Summary of contents

Page 1

PESDxL4UF; PESDxL4UG; PESDxL4UW Low capacitance unidirectional quadruple ESD protection diode arrays Rev. 04 — 28 February 2008 1. Product profile 1.1 General description Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages ...

Page 2

... NXP Semiconductors 1.4 Quick reference data Table unless otherwise specified. amb Symbol Per diode V RWM Pinning information Table 3. Pin PESD3V3L4UF; PESD5V0L4UF PESD3V3L4UG; PESD5V0L4UG PESD3V3L4UW; PESD5V0L4UW PESDXL4UF_G_W_4 Product data sheet Low capacitance unidirectional quadruple ESD protection diode arrays ...

Page 3

... NXP Semiconductors 3. Ordering information Table 4. Type number PESD3V3L4UF PESD5V0L4UF PESD3V3L4UG PESD5V0L4UG PESD3V3L4UW PESD5V0L4UW 4. Marking Table 5. Type number PESD3V3L4UF PESD5V0L4UF PESD3V3L4UG PESD5V0L4UG PESD3V3L4UW PESD5V0L4UW [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). ...

Page 4

... NXP Semiconductors Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol I ZSM P ZSM Per device amb T stg [1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. [2] For PESDxL4UF measured from pin pin [3] For PESDxL4UG and PESDxL4UW measured from pin pin 2 ...

Page 5

... NXP Semiconductors 120 100 % (%) Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5 6. Characteristics Table unless otherwise specified. amb Symbol Parameter Per diode V RWM PESDXL4UF_G_W_4 Product data sheet Low capacitance unidirectional quadruple ESD protection diode arrays ...

Page 6

... NXP Semiconductors Table unless otherwise specified. amb Symbol Parameter dif [1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. [2] For PESDxL4UF measured from pin pin [3] For PESDxL4UG and PESDxL4UW measured from pin pin 2. ...

Page 7

... NXP Semiconductors 10 I ZSM ( amb (1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW (2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW Fig 3. Non-repetitive peak reverse current as a function of pulse duration; maximum values (pF ( MHz amb (1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW (2) PESD5V0L4UF ...

Page 8

... NXP Semiconductors Fig 7. V-I characteristics for a unidirectional ESD protection diode PESDXL4UF_G_W_4 Product data sheet Low capacitance unidirectional quadruple ESD protection diode arrays RWM + P-N Rev. 04 — 28 February 2008 PESDxL4UF/G 006aaa407 © NXP B.V. 2008. All rights reserved ...

Page 9

... NXP Semiconductors ESD TESTER IEC 61000-4-2 network C = 150 pF 330 Z Z GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND unclamped 1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig 8. ESD clamping test setup and waveforms PESDXL4UF_G_W_4 Product data sheet ...

Page 10

... NXP Semiconductors 7. Application information The devices are designed for the protection four unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are both, positive and negative with respect to ground. The devices provide a surge capability per line for an 8/20 s waveform each ...

Page 11

... NXP Semiconductors 8. Package outline 1.05 0.95 0.6 0. 0.17 0.5 1 1.4 0 0.40 0.35 0.32 0.27 Dimensions in mm Fig 10. Package outline PESDxL4UF (SOT886) Fig 12. Package outline PESDxL4UW (SOT665) PESDXL4UF_G_W_4 Product data sheet Low capacitance unidirectional quadruple ESD protection diode arrays 0.50 max 0.04 max 2.2 2.0 04-07-22 Dimensions in mm Fig 11. Package outline PESDxL4UG (SOT353/SC-88A) 1 ...

Page 12

... NXP Semiconductors 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description PESD3V3L4UF SOT886 4 mm pitch tape and reel pitch tape and reel; T4 PESD5V0L4UF SOT886 4 mm pitch tape and reel pitch tape and reel ...

Page 13

... NXP Semiconductors Fig 14. Reflow soldering footprint PESDxL4UG (SOT353/SC-88A) Fig 15. Wave soldering footprint PESDxL4UG (SOT353/SC-88A) PESDXL4UF_G_W_4 Product data sheet Low capacitance unidirectional quadruple ESD protection diode arrays 2.35 0. 0.50 solder lands (4 ) solder paste solder resist occupied area Dimensions in mm 2.25 4.50 2.70 0.70 solder lands ...

Page 14

... NXP Semiconductors Fig 16. Reflow soldering footprint PESDxL4UW (SOT665) PESDXL4UF_G_W_4 Product data sheet Low capacitance unidirectional quadruple ESD protection diode arrays 0.70 0. 2.00 1.70 1.00 solder lands 0.075 solder resist Reflow soldering is the only recommended soldering method. Rev. 04 — 28 February 2008 PESDxL4UF/G/W 2.45 2.10 1.60 0.15 (2x) 0. 0.30 0.55 0.375 ( ...

Page 15

... NXP Semiconductors 11. Revision history Table 11. Revision history Document ID Release date PESDXL4UF_G_W_4 20080228 • Modifications: Figure 8 “ESD clamping test setup and PESDXL4UF_G_W_3 20080114 PESDXL4UW_SER_2 20040406 PESDXL4UG_SERIES_1 20040323 PESDXL4UF_G_W_4 Product data sheet Low capacitance unidirectional quadruple ESD protection diode arrays Data sheet status Product data sheet waveforms” ...

Page 16

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 17

... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Application information Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 12 Legal information ...

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