IS61NLP102418-250B3 ISSI, Integrated Silicon Solution Inc, IS61NLP102418-250B3 Datasheet - Page 26

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IS61NLP102418-250B3

Manufacturer Part Number
IS61NLP102418-250B3
Description
IC SRAM 18MBIT 250MHZ 165FBGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61NLP102418-250B3

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
18M (1M x 18)
Speed
250MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.465 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-FBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61NLP102418-250B3
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS61NLP102418-250B3-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
TAP Electrical Characteristics Over the Operating Range
Notes:
TAP AC ELECTRICAL CHARACTERISTICS
  Symbol  Parameter 
  t
f
t
t
  t
  t
  t
  t
  t
t
t
  t
Notes:
1. Both t
2. Test conditions are specified using the load in TAP AC test conditions. t
26
IS61NLP25672/IS61NVP25672 
IS61NLP51236/IS61NVP51236
IS61NLP102418/IS61NVP102418   
Symbol 
V
V
V
V
V
V
I
1. All Voltage referenced to Ground.
2. Overshoot: V
x
oh1
oh2
ol1
ol2
Ih
Il
Tcyc
Tf
Th
Tl
TMSS
TdIS
cS
TMSh
TdIh
ch
TdoV
Tdox
Undershoot: V
Power-up: V
cS
and t
TCK Clock cycle time
TCK Clock frequency
TCK Clock HIGH
TCK Clock LOW
TMS setup to TCK Clock Rise
TDI setup to TCK Clock Rise
Capture setup to TCK Rise
TMS hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture hold after Clock Rise
TCK LOW to TDO valid
TCK LOW to TDO invalid
ch
Ih
Ih
< 2.6V and V
Il
(AC) ≤ V
refer to the set-up and hold time requirements of latching data from the boundary scan register.
(AC)
Parameter 
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
0.5V for t
dd
+1.5V for t
dd
< 2.4V and V
t
Tcyc
t
Tcyc
/2,
ddq
/2,
< 1.4V for t < 200 ms.
(1,2)
(OVER OPERATINg RANgE)
Test Conditions 
V
I
I
SS
oh
oh
I
I
ol
ol
≤ V I ≤ V
= –2.0 mA
= –100 µA
= 2.0 mA
= 100 µA
r
Integrated Silicon Solution, Inc. — www.issi.com
/t
f
= 1 ns.
(1,2)
  Min. 
100
ddq
40
40
10
10
10
10
10
10
0
Max. 
10
20
Min. 
–0.3
–10
1.7
2.1
1.7
V
dd
Max. 
MHz
0.7
0.2
0.7
Unit
10
+0.3
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
01/06/2011
Units
µA
Rev.  M
V
V
V
V
V
V

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