IS61NLP102418-250B3 ISSI, Integrated Silicon Solution Inc, IS61NLP102418-250B3 Datasheet - Page 8

• Manufacturer Part Number: IS61NLP102418-250B3
• Description: IC SRAM 18MBIT 250MHZ 165FBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLP102418-250B3

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (1M x 18)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-FBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

STATE DIAGRAM
SYNCHRONOUS TRUTH TABLE
Notes:
1. "X" means don't care.
2. The rising edge of clock is symbolized by ↑
3. A continue deselect cycle can only be entered if a deselect cycle is executed first.
4. WE = L means Write operation in Write Truth Table.
5. Operation finally depends on status of asynchronous pins (ZZ and OE).
8
IS61NLP25672/IS61NVP25672
IS61NLP51236/IS61NVP51236
IS61NLP102418/IS61NVP102418
Operation
Not Selected
Not Selected
Not Selected
Not Selected Continue
Begin Burst Read
Continue Burst Read
NOP/Dummy Read
Dummy Read
Begin Burst Write
Continue Burst Write
NOP/Write Abort
Write Abort
Ignore Clock
WE = H means Read operation in Write Truth Table.
READ
BURST
READ
BURST
READ
External Address
External Address
External Address
BURST
BEGIN
Current Address
READ
Next Address
Next Address
Next Address
Next Address
Address
Used
N/A
N/A
N/A
N/A
N/A
(1)
WRITE
DS
DS
READ
DS
CE
H
X
X
X
X
X
X
X
X
L
L
L
L
DESELECT
WRITE
READ
CE2
X
X
X
H
X
H
X
H
X
H
X
X
L
CE2
X
X
H
X
X
X
X
X
X
Integrated Silicon Solution, Inc. — www.issi.com
L
L
L
L
WRITE
BURST
DS
ADV
DS
H
H
H
H
H
L
L
L
L
L
L
L
X
READ
WE
H
H
X
X
X
X
X
X
L
X
L
X
X
BURST
BEGIN
WRITE
BURST
WRITE
BWx
H
H
X
X
X
X
X
X
X
X
L
L
X
WRITE
OE
H
H
X
X
X
X
X
X
X
X
X
L
L
BURST
WRITE
CKE
H
L
L
L
L
L
L
L
L
L
L
L
L
01/06/2011
CLK
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
Rev. M