M28W160ECB70ZB6E NUMONYX, M28W160ECB70ZB6E Datasheet - Page 20

• Manufacturer Part Number: M28W160ECB70ZB6E
• Description: IC FLASH 16MBIT 70NS 46TFBGA
• Manufacturer: NUMONYX

Specifications of M28W160ECB70ZB6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 46-TFBGA
• Package: 46TFBGA
• Cell Type: NOR
• Density: 16 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 31
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M28W160ECT, M28W160ECB
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Table 11. Absolute Maximum Ratings
Note: 1. Depending on range.
20/50
V
Symbol
DD
T
T
V
V
, V
BIAS
T
STG
PP
IO
A
DDQ
Ambient Operating Temperature
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Program Voltage
Parameter
(1)
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the Numonyx SURE Pro-
gram and other relevant quality documents.
– 0.6
– 0.6
– 0.6
– 40
– 40
– 55
Min
Value
V
DDQ
Max
125
155
85
4.1
13
+0.6
Unit
°C
°C
°C
V
V
V