M28W160ECB70ZB6E NUMONYX, M28W160ECB70ZB6E Datasheet - Page 43

• Manufacturer Part Number: M28W160ECB70ZB6E
• Description: IC FLASH 16MBIT 70NS 46TFBGA
• Manufacturer: NUMONYX

Specifications of M28W160ECB70ZB6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 46-TFBGA
• Package: 46TFBGA
• Cell Type: NOR
• Density: 16 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 31
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 20. Erase Flowchart and Pseudo Code
Note: If an error is found, the Status Register must be cleared before further Program/Erase operations.
Address & D0h
Read Status
Write Block
b4, b5 = 1
Write 20h
Register
b7 = 1
b3 = 0
b5 = 0
b1 = 0
Start
End
YES
YES
NO
YES
YES
NO
NO
YES
NO
NO
Sequence Error (1)
Erase to Protected
Erase Error (1)
Block Error (1)
V PP Invalid
Command
Error (1)
if ( (status_register.b5==1) )
/* erase error */
erase_command ( blockToErase ) {
if ( (status_register.b4==1) && (status_register.b5==1) )
/* command sequence error */
if (status_register.b1==1) /*program to protect block error */
if (status_register.b3==1) /*VPP invalid error */
}
do {
error_handler ( ) ;
error_handler ( ) ;
error_handler ( ) ;
error_handler ( ) ;
writeToFlash (any_address, 0x20) ;
writeToFlash (blockToErase, 0xD0) ;
/* only A12-A20 are significannt */
/* Memory enters read status state after
the Erase Command */
} while (status_register.b7== 0) ;
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
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