M28W160ECB70ZB6E NUMONYX, M28W160ECB70ZB6E Datasheet - Page 27

• Manufacturer Part Number: M28W160ECB70ZB6E
• Description: IC FLASH 16MBIT 70NS 46TFBGA
• Manufacturer: NUMONYX

Specifications of M28W160ECB70ZB6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 46-TFBGA
• Package: 46TFBGA
• Cell Type: NOR
• Density: 16 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 31
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 17. Write AC Characteristics, Chip Enable Controlled
Note: 1. Sampled only, not 100% tested.
t
QVVPL
t
VPHEH
Symbol
t
t
t
WPHEH
QVWPL
t
t
t
t
t
t
t
t
t
t
EHWH
EHDX
AVEH
DVEH
EHAX
EHEL
EHGL
ELEH
ELQV
WLEL
AVAV
2. Applicable if V
(1,2)
(1)
t
t
t
t
t
CPH
Alt
t
t
t
t
VPS
t
WC
WH
DS
AH
DH
CP
CS
AS
PP
Write Cycle Time
Address Valid to Chip Enable High
Data Valid to Chip Enable High
Chip Enable High to Address Transition
Chip Enable High to Data Transition
Chip Enable High to Chip Enable Low
Chip Enable High to Output Enable
Low
Chip Enable High to Write Enable High
Chip Enable Low to Chip Enable High
Chip Enable Low to Output Valid
Output Valid to V
Data Valid to Write Protect Low
V
Write Enable Low to Chip Enable Low
Write Protect High to Chip Enable High
is seen as a logic input (V
PP
High to Chip Enable High
PP
Parameter
Low
PP
< 3.6V).
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
200
70
70
45
45
25
25
45
70
45
0
0
0
0
0
0
M28W160ECT, M28W160ECB
200
M28W160EC
85
85
45
45
25
25
45
85
45
0
0
0
0
0
0
200
90
90
50
30
30
50
90
50
50
0
0
0
0
0
0
100
100
100
200
50
50
50
30
30
50
0
0
0
0
0
0
Unit
27/50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns