RC28F128M29EWLA NUMONYX, RC28F128M29EWLA Datasheet - Page 36

no-image

RC28F128M29EWLA

Manufacturer Part Number
RC28F128M29EWLA
Description
IC FLASH 128MBIT 25NS 64BGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of RC28F128M29EWLA

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16Mx8, 8Mx16)
Speed
60ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-BGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RC28F128M29EWLA
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Command Interface
6.2
Note:
6.2.1
36
Fast Program commands
The M29EW offers a set of Fast Program commands to improve the programming
throughput:
The
Program commands, 16-bit mode on page 46
commands.
When V
Buffer Program, it will accelerate the programming speed. (see
program timing
When V
Unlock Bypass mode (see
For double byte/word program, quadruple byte/word program and octuple byte program,
only V
After programming has started, Bus Read operations in the memory output the Status
Register content. Write to Buffer Program command can be suspended and then resumed
by issuing a Program Suspend command and a Program Resume command, respectively
(see
command).
After the fast program operation has completed, the memory will return to the Read mode,
unless an error has occurred. When an error occurs Bus Read operations to the memory
will continue to output the Status Register. A Read/Reset command must be issued to reset
the error condition and return to Read mode. One of the Erase commands must be used to
set all the bits in a block or in the whole memory from ‘0’ to ‘1’.
Typical program times are given in
Double Byte/Word Program command
The Double Byte/Word Program command for 32-Mbit and 64-Mbit devices is used to write
a page of two adjacent bytes/words in parallel. The two bytes/words must differ only for the
address A-1 or A0, respectively. Three bus write cycles are necessary to issue the Double
Byte/Word Program command:
1.
2.
3.
See
commands, 16-bit mode
Table 11: Fast Program commands, 8-bit mode on page 45
Table 11: Fast Program commands, 8-bit mode
The first bus cycle sets up the Double Byte/Word Program command.
The second bus cycle latches the Address and the Data of the first byte/word to be
programmed.
The third bus cycle latches the Address and the Data of the second byte/word to be
programmed and starts the Program/Erase Controller.
Section 6.1.8: Program Suspend command
PPL
PPH
PPH
Double Byte/Word Program (for 32-Mbit and 64-Mbit devices)
Quadruple Byte/Word Program (for 32-Mbit and 64-Mbit devices)
Octuple Byte Program (for 32-Mbit and 64-Mbit devices)
Write to Buffer Program
Enhanced Buffer Program (x16 128-Mbit device only)
Unlock Bypass
could be applied to the VPP/WP# pin.
is applied to the V
is applied to the V
waveforms)
for command details.
Section 6.2.9: Unlock Bypass
PP
PP
/WP# pin during Write to Buffer Program and Enhanced
/WP# pin in read mode, the memory automatically enters
Table 28: Programming and Erase
208031-04
show a summary of the Fast Program
and
and
Section 6.1.9: Program Resume
Table 12: Fast Program
command).
Numonyx
Figure 31: Accelerated
and the
Performance.
®
Table 12: Fast
Axcell™ M29EW

Related parts for RC28F128M29EWLA