IDT7130SA55P IDT, Integrated Device Technology Inc, IDT7130SA55P Datasheet - Page 3
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IDT7130SA55P
Manufacturer Part Number
IDT7130SA55P
Description
IC SRAM 8KBIT 55NS 48DIP
Manufacturer
IDT, Integrated Device Technology Inc
Series
-r
Specifications of IDT7130SA55P
Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
8K (1K x 8)
Speed
55ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-DIP
Density
8Kb
Access Time (max)
55ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
20b
Package Type
PDIP
Operating Temp Range
0C to 70C
Number Of Ports
2
Supply Current
155mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Through Hole
Pin Count
48
Word Size
8b
Number Of Words
1K
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
7130SA55P
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT7130SA55P
Manufacturer:
IDT
Quantity:
20 000
Company:
Part Number:
IDT7130SA55PF
Manufacturer:
HIROSE ELECTRIC
Quantity:
4
Company:
Part Number:
IDT7130SA55PF
Manufacturer:
IDT
Quantity:
300
Company:
Part Number:
IDT7130SA55PF
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Company:
Part Number:
IDT7130SA55PF8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
NOTE:
1. At Vcc
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
ABSOLUTE MAXIMUM RATINGS
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
2. VTERM must not exceed Vcc + 0.5 for more than 25% of the cycle time
CAPACITANCE
(T
NOTES:
1. This parameter is determined by device characterization but is not
2. 3dv references the interpolated capacitance when the input and
3. 11pF max. for other packages.
Symbol
Symbol
V
T
T
T
I
OUT
Sy
A
C
C
A
BIAS
STG
TERM
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of the specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc
+ 0.5V.
|l
|l
V
V
V
production tested.
output signals switch from 0V to 3V or from 3V to 0V.
Ll
LO
IN
OUT
OL
OL
OH
= +25 C, f = 1.0MHz) TQFP ONLY
mbol
|
|
(2)
<
2.0V leakages are undefined.
Temperature
Terminal Voltage
with Respect to
GND
Operating
Temperature
Temperature
Under Bias
Storage
DC Output
Current
Input Leakage
Current
Output Leakage
Current
Output Low Voltage
(l/O0-l/O
Open Drain Output
Low Voltage (
Output High Voltage
Input Capacitance
Output Capacitance
Rating
Parameter
Parameter
(1)
(1)
(1)
7
)
BUSY
Commercial
–0.5 to +7.0
–55 to +125
–55 to +125
0 to +70
,
INT
50
)
Conditions
V
V
IN
IN
(3)
V
V
V
CE
l
l
l
l
OL
OL
OL
OH
= 3dV
= 3dV
CC
IN
CC
–0.5 to +7.0
–55 to +125
–65 to +135
–65 to +150
(1)
= 16mA
= 4mA
= 16mA
= V
Test Conditions
= -4mA
Military
= 0V to V
= 5.5V,
= 5.5V,
50
(2)
IH
, V
Max. Unit
OUT
10
9
CCIN
2689 tbl 01
2689 tbl 05
= 0V to V
Unit
mA
V
= GND to V
C
C
C
pF
pF
6.01
CC
RECOMMENDED
DC OPERATING CONDITIONS
NOTES:
1. V
2. V
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Symbol
V
GND
V
V
Military
Commercial
C
CC
IH
IL
Grade
CC
IL
TERM
(min.) > -1.5V for pulse width less than 10ns.
Min.
must not exceed Vcc + 0.5V.
2.4
—
—
—
—
MILITARY AND COMMERCIAL TEMPERATURE RANGES
7130SA
7140SA
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Parameter
–55 C to +125 C
Temperature
0 C to +70 C
(V
Max.
Ambient
0.4
0.5
CC
10
10
—
= 5.0V
Max.
2.4
—
—
—
—
10%)
7130LA
7140LA
–0.5
Min.
4.5
2.2
GND
0
0V
0V
(1)
Max.
Typ.
0.4
0.5
—
5.0
5
5
—
—
0
5.0V
5.0V
Max.
6.0
5.5
0.8
V
0
CC
(2)
10%
10%
Unit
2689 tbl 04
2689 tbl 03
2689 tbl 02
V
V
V
A
A
Unit
3
V
V
V
V