IDT70261L20PF IDT, Integrated Device Technology Inc, IDT70261L20PF Datasheet - Page 8

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IDT70261L20PF

Manufacturer Part Number
IDT70261L20PF
Description
IC SRAM 256KBIT 20NS 100TQFP
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT70261L20PF

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
256K (16K x 16)
Speed
20ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
70261L20PF

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT70261L20PF
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
IDT70261L20PF
Manufacturer:
IDT
Quantity:
20 000
Part Number:
IDT70261L20PF8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
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Part Number:
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IDT
Quantity:
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Part Number:
IDT70261L20PFI
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
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Manufacturer:
IDT
Quantity:
20 000
Part Number:
IDT70261L20PFI8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = V
4. The specification for t
5. 'X' in part numbers indicates power rating (S or L).
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
t
t
t
WC
EW
AW
AS
WP
WR
DW
HZ
DH
WZ
OW
SWRD
SPS
WC
EW
AW
AS
WP
WR
DW
HZ
DH
WZ
OW
SWRD
SPS
Symbol
Symbol
IDT70261S/L
High-Speed 16K x 16 Dual-Port Static RAM with Interrupt
and temperature, the actual t
Chip Enable to End-of-Write
Data Valid to End-of-Write
Output High-Z Time
Data Hold Time
Output Active from End-of-Write
Write Cycle Time
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write Enable to Output in High-Z
SEM Flag Write to Read Time
SEM Flag Contention Window
Chip Enable to End-of-Write
Data Valid to End-of-Write
Output High-Z Time
Data Hold Time
Output Active from End-of-Write
Write Cycle Time
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write Enable to Output in High-Z
SEM Flag Write to Read Time
SEM Flag Contention Window
DH
must be met by the device supplying write data to the RAM under all operating conditions. Although t
IL
(4)
(4)
and SEM = V
DH
(1,2)
(1,2)
will always be smaller than the actual t
(3)
(3)
Parameter
(3)
(3)
IH
(1,2,4)
(1,2,4)
(1,2)
(1,2)
. To access semaphore, CE = V
Parameter
OW
.
6.42
IH
8
and SEM = V
Min.
____
____
15
12
12
12
10
0
0
0
0
5
5
Com'l Only
70261X15
IL
Max.
____
____
____
____
____
____
____
____
____
____
____
. Either condition must be valid for the entire t
(5)
10
10
Industrial and Commercial Temperature Ranges
Min.
____
____
Min.
35
30
30
25
15
____
____
0
0
0
0
5
5
20
15
15
15
15
Com'l Only
0
0
0
0
5
5
Com'l & Ind
70261X35
70261X20
Max.
Max.
____
____
____
____
____
____
____
____
____
____
____
15
15
____
____
____
____
____
____
____
____
____
____
____
12
12
DH
and t
OW
Min.
Min.
____
____
55
45
45
40
30
____
____
0
0
0
0
5
5
25
20
20
20
15
0
0
0
0
5
5
Com'l Only
Com'l & Ind
values will vary over voltage
70261X55
70261X25
EW
Max.
time.
Max.
____
____
____
____
____
____
____
____
____
____
____
25
25
____
____
____
____
____
____
____
____
____
____
____
15
15
3039 tbl 13b
3039 tbl 13a
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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