MT47H128M4B6-3:D TR Micron Technology Inc, MT47H128M4B6-3:D TR Datasheet - Page 119

• Manufacturer Part Number: MT47H128M4B6-3:D TR
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H128M4B6-3:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (128Mx4)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1291-2; MT47H128M4B6-3:D TR

Figure 75: PRECHARGE Command-to-Power-Down Entry
Figure 76: LOAD MODE Command-to-Power-Down Entry
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
Notes:
Note:
Command
Command
Address
Address
1. The earliest precharge power-down entry may occur is at T2, which is 1 ×
1. Valid address for LM command includes MR, EMR, EMR(2), and EMR(3) registers.
2. All banks must be in the precharged state and
3. The earliest precharge power-down entry is at T3, which is after
CK#
CKE
CK#
A10
CKE
CK
PRECHARGE command. Precharge power-down entry occurs prior to
isfied.
CK
Valid
T0
Valid
T0
t RP 2
Valid 1
LM
T1
Single bank
Valid
All banks
119
PRE
T1
vs
1 x
t MRD
t
CK
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T2
Power-down 1
512Mb: x4, x8, x16 DDR2 SDRAM
entry
NOP
T2
t
Power-down 3
RP met prior to issuing LM command.
entry
NOP
T3
t
CKE (MIN)
T3
Power-Down Mode
©2004 Micron Technology, Inc. All rights reserved.
t CKE (MIN)
Don’t Care
t
MRD is satisfied.
T4
t
RP (MIN) being sat-
Don’t Care
t
CK after the