MT47H128M4B6-3:D TR Micron Technology Inc, MT47H128M4B6-3:D TR Datasheet - Page 17

• Manufacturer Part Number: MT47H128M4B6-3:D TR
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H128M4B6-3:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (128Mx4)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1291-2; MT47H128M4B6-3:D TR

Packaging
Package Dimensions
Figure 8: 84-Ball FBGA (8mm x 12.5mm) – x16
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
Solder ball material:
Pb-free – (SAC305) SnAgCu
Pb – (Eutectic) SnPbAg
Dimensions apply to solder
balls post-reflow on Ø0.33
NSMD ball pads.
84X Ø0.45
11.2 CTR
Seating
plane
0.12 A
Note:
0.8 TYP
0.8 TYP
A
1. All dimensions are in millimeters.
9
8
7
6.4 CTR
8 ±0.15
3
2
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
0.8 ±0.1
17
Exposed
gold-plated pad
1.0mm (MAX) X
0.7mm (NOM)
nonconductive floating pad
12.5 ±0.15
Ball A1 ID
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
1.2 MAX
0.25 MIN
©2004 Micron Technology, Inc. All rights reserved.
Ball A1 ID
Packaging