MT48H8M16LFB4-8 TR Micron Technology Inc, MT48H8M16LFB4-8 TR Datasheet - Page 62

• Manufacturer Part Number: MT48H8M16LFB4-8 TR
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M16LFB4-8 TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1052-2

Figure 48: Write – Full-Page Burst
PDF: 09005aef80c97087/Source: 09005aef80c97015
MT48H8M16_2.fm - Rev. E 3/05 EN
DQMU, DQML
COMMAND
A0-A9, A11
BA0, BA1
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
Notes: 1. A9 and A11 are “Don’t Care.”
t RCD
t CL
2.
3. Page left open; no
T1
NOP
t
t CH
WR must be satisfied prior to PRECHARGE command.
t CMS
t CK
t DS
COLUMN m 1
D
T2
WRITE
BANK
IN
t CMH
m
t DH
t
t DS
RP.
D
IN
T3
NOP
m + 1
t DH
62
512 (x16) locations within same row
t DS
D
IN
T4
NOP
m + 2
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Full page completed
t DS
D
IN
T5
m + 3
NOP
t DH
128Mb: x16 Mobile SDRAM
(
(
(
(
(
(
)
(
)
(
)
(
)
(
)
(
)
)
)
)
)
(
(
(
)
(
(
(
(
(
(
)
(
)
)
)
)
(
)
(
)
(
)
(
)
(
)
)
)
)
)
)
(
(
(
(
)
(
)
(
)
)
)
)
t DS
D
Tn + 1
IN
NOP
m - 1
t DH
©2003 Micron Technology, Inc. All rights reserved.
Full-page burst does not
self-terminate. Can use
BURST TERMINATE
command to stop. 2, 3
Timing Diagrams
BURST TERM
Tn + 2
DON’T CARE
Tn + 3
NOP