MT45W4MW16BCGB-701 WT Micron Technology Inc, MT45W4MW16BCGB-701 WT Datasheet - Page 20

• Manufacturer Part Number: MT45W4MW16BCGB-701 WT
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BCGB-701 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 13:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
(except A[19:18])
A[19:18]
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OE#
CLK
CRE
Configuration Register WRITE, Synchronous Mode Followed by READ ARRAY Operation
CE#
2
Notes:
Latch control register value
High-Z
1. Nondefault BCR settings for synchronous mode configuration register WRITE followed by
2. A[19:18] = 00b to load RCR and A[19:18] = 10b to load BCR.
3. CE# must remain LOW to complete a burst-of-one WRITE. WAIT must be monitored—addi-
t CSP
t CEW
OPCODE
t SP
t SP
t SP
t SP
READ ARRAY operation: latency code 2 (3 clocks); WAIT active LOW; WAIT asserted during
delay.
tional WAIT cycles caused by refresh collisions require a corresponding number of addi-
tional CE# LOW cycles.
t HD
t HD
t HD
t HD
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
Latch control register address
Note 3
20
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t CBPH
High-Z
Address
Address
©2005 Micron Technology, Inc. All rights reserved.
Don’t Care
Registers
Valid
data