MT45W4MW16BCGB-701 WT Micron Technology Inc, MT45W4MW16BCGB-701 WT Datasheet - Page 42

• Manufacturer Part Number: MT45W4MW16BCGB-701 WT
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BCGB-701 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Timing Diagrams
Figure 28:
Figure 29:
Table 20:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
Parameter
Time from DPD entry to DPD exit
CE# LOW time to exit DPD
Initialization period
CE#
Initialization Timing Parameters
Initialization Period
DPD Entry and Exit Timing
RCR[4] = 0
Notes:
Write
Vcc, VccQ = 1.7V
1. The CellularRAM Workgroup 1.5 specification for
DPD enabled
t DPD
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
DPD exit
t DPDX
42
Symbol
t
t
t
DPD
DPDX
PU
t PU
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Device initialization
Min
10
10
–
t PU
t
DPD is a minimum of 150µs.
70ns
normal operation
Device ready for
Max
Vcc (MIN)
150
–
–
normal operation
©2005 Micron Technology, Inc. All rights reserved.
Device ready for
Timing Diagrams
Unit
µs
µs
µs
Notes
1