MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 34

IC DDR SDRAM 128MBIT 60VFBGA

MT46H8M16LFCF-10

Manufacturer Part Number
MT46H8M16LFCF-10
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheets

Specifications of MT46H8M16LFCF-10

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H8M16LFCF-10
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46H8M16LFCF-10 IT
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46H8M16LFCF-10 IT TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46H8M16LFCF-10 TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 22:
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
WRITE-to-READ – Uninterrupting
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An uninterrupted burst of 4 is shown.
3.
4. The READ and WRITE commands are to same device. However, the READ and WRITE com-
5. A10 is LOW with the WRITE command (auto precharge is disabled).
t
mands may be to different devices, in which case
mand could be applied earlier.
WTR is referenced from the first positive CK edge after the last data-in pair.
IN
D
b = data-in for column b; D
b
IN
NOP
D
T1
b
IN
b+1
D
D
b
IN
IN
T1n
b+1
D
IN
D
b+2
b+1
D
IN
IN
b+2
NOP
D
T2
IN
b+3
D
b+2
D
IN
IN
T2n
D
b+3
IN
34
b+3
D
IN
OUT
T3
NOP
t
WTR
n = data-out for column n.
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bank a,
Col n
READ
T4
DON’T CARE
t
WTR is not required and the READ com-
CL = 2
CL = 2
CL = 2
T5
NOP
TRANSITIONING DATA
T5n
©2006 Micron Technology, Inc. All rights reserved.
D
D
D
OUT
n
OUT
OUT
n
n
T6
NOP
D
D
D
n+1
n+1
n+1
OUT
OUT
OUT
Operations
T6n
Advance

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