MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 54

• Manufacturer Part Number: MT46H8M16LFCF-10
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
36. Values for I
37. The transition time for input signals (CAS#, CKE, CS#, DM, DQ, DQS, RAS#, WE#, and
38.
39. These parameters guarantee device timing but they are not necessarily tested on each
40. Clock must be toggled a minimum of two times during this period.
41. Clock must be toggled a minimum of one time during this period.
values are estimated.
addresses) are measured between V
V
t
next higher integer.
device.
DAL = (
IH
(
DC
) to V
t
WR/
DD
IL
t
(
6 85°C are guaranteed for the entire temperature range. All other I
CK) + (
AC
) for falling input signals.
t
RP/
t
CK): for each term, if not already an integer, round to the
54
128Mb: 8 Meg x 16 Mobile DDR SDRAM
IL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(
DC
) to V
IH
(
AC
) for rising input signals and
©2004 Micron Technology, Inc. All rights reserved.
Notes
DD
6