MT45W4MW16BFB-706 WT Micron Technology Inc, MT45W4MW16BFB-706 WT Datasheet - Page 12
![IC PSRAM 64MBIT 70NS 54VFBGA](/photos/7/22/72262/557-54-vfbga_sml.jpg)
MT45W4MW16BFB-706 WT
Manufacturer Part Number
MT45W4MW16BFB-706 WT
Description
IC PSRAM 64MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W4MW16BBB-706_WT_TR.pdf
(61 pages)
Specifications of MT45W4MW16BFB-706 WT
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 8:
Figure 9:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
DQ[15:0]
Burst Mode READ (4-word Burst)
DQ[15:0]
Burst Mode WRITE (4-word Burst)
LB#/UB#
LB#/UB#
A[21:0]
A[21:0]
ADV#
ADV#
WAIT
WAIT
WE#
WE#
OE#
CLK
OE#
CE#
CLK
CE#
Note:
Note:
WRITE Burst Identified
READ Burst Identified
Non-default BCR settings for burst mode READ (4-word burst): Latency code two (three
clocks); WAIT active LOW; WAIT asserted during delay.
Non-default BCR settings for burst mode WRITE (4-word burst): Latency code two (three
clocks); WAIT active LOW; WAIT asserted during delay.
ADDRESS
(WE# = LOW)
ADDRESS
(WE# = HIGH)
VALID
VALID
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Latency Code 2 (3 clocks)
Latency Code 2 (3 clocks)
12
D[0]
D[0]
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D[1]
D[1]
DON’T CARE
D[2]
D[2]
Bus Operating Modes
©2003 Micron Technology, Inc. All rights reserved.
UNDEFINED
DON’T CARE
D[3]
D[3]