MT45W4MW16BFB-706 WT Micron Technology Inc, MT45W4MW16BFB-706 WT Datasheet - Page 28
![IC PSRAM 64MBIT 70NS 54VFBGA](/photos/7/22/72262/557-54-vfbga_sml.jpg)
MT45W4MW16BFB-706 WT
Manufacturer Part Number
MT45W4MW16BFB-706 WT
Description
IC PSRAM 64MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W4MW16BBB-706_WT_TR.pdf
(61 pages)
Specifications of MT45W4MW16BFB-706 WT
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Electrical Characteristics
Table 7:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Parameter
Voltage to Any Ball Except V
Voltage on V
Voltage on V
Storage Temperature (plastic)
Operating Temperature (case)
Soldering Temperature and Time
Wireless (see Note 1)
Industrial
10s (solder ball only)
CC
CC
Absolute Maximum Ratings
Q Supply Relative to V
Supply Relative to V
Notes: 1. -30°C exceeds the CellularRAM Working Group 1.0 specification of -25°C.
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
CC
, V
CC
Q Relative to V
SS
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
SS
SS
28
-0.50V to (4.0V or V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-55°C to +150°C
-0.2V to +2.45V
-30°C to +85°C
-40°C to +85°C
-0.2V to +4.0V
Electrical Characteristics
CC
Rating
+260°C
Q + 0.3V, whichever is less)
©2003 Micron Technology, Inc. All rights reserved.