MT48LC16M16A2TG-7E L:D TR Micron Technology Inc, MT48LC16M16A2TG-7E L:D TR Datasheet - Page 71

IC SDRAM 256MBIT 133MHZ 54TSOP

MT48LC16M16A2TG-7E L:D TR

Manufacturer Part Number
MT48LC16M16A2TG-7E L:D TR
Description
IC SDRAM 256MBIT 133MHZ 54TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48LC16M16A2TG-7E L:D TR

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 40: READ With Auto Precharge Interrupted by a WRITE
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Internal
States
Command
Note:
Address
Bank m
Bank n
DQM
CLK
DQ
1
1. DQM is HIGH at T2 to prevent D
active
Page
READ - AP
Bank n,
Bank n
T0
Col a
READ with burst of 4
Page active
NOP
CL = 3 (bank n)
T1
T2
NOP
71
T3
D
NOP
OUT
OUT
a + 1 from contending with D
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE - AP
Bank m,
Col d
T4
Bank m
D
Interrupt burst, precharge
IN
WRITE with burst of 4
T5
NOP
256Mb: x4, x8, x16 SDRAM
D
t
RP - bank n
IN
PRECHARGE Operation
T6
NOP
D
IN
© 1999 Micron Technology, Inc. All rights reserved.
IN
d at T4.
T7
NOP
D
t WR - bank m
Don’t Care
IN
Write-back
Idle

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