MT48V8M16LFB4-10 IT:G Micron Technology Inc, MT48V8M16LFB4-10 IT:G Datasheet - Page 62
![IC SDRAM 128MBIT 100MHZ 54VFBGA](/photos/7/22/72286/557-54-fbga_sml.jpg)
MT48V8M16LFB4-10 IT:G
Manufacturer Part Number
MT48V8M16LFB4-10 IT:G
Description
IC SDRAM 128MBIT 100MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48LC8M16LFB4-75MG_TR.pdf
(80 pages)
Specifications of MT48V8M16LFB4-10 IT:G
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- Current page: 62 of 80
- Download datasheet (3Mb)
Figure 41:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
DQMU, DQML
Auto Refresh Mode
COMMAND
A0–A9, A11
BA0, BA1
Notes:
CLK
CKE
A10
DQ
Precharge all
High-Z
t CKS
active banks
t CMS
t AS
SINGLE BANK
ALL BANKS
PRECHARGE
BANK(S)
1. Each AUTO REFRESH command performs a refresh cycle. Back-to-back commands are not
2.
T0
t AH
t CKH
t CMH
required. See Table 17 on page 53.
t
commands must be applied on each positive clock edge during
t CK
RFC must not be interrupted by any executable command; COMMAND INHIBIT or NOP
t RP
T1
NOP
T2
REFRESH
AUTO
t CH
t RFC
62
1, 2
NOP
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NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t CL
Tn + 1
REFRESH
AUTO
128Mb: x16, x32 Mobile SDRAM
t RFC
NOP
1, 2
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NOP
t
©2001 Micron Technology, Inc. All rights reserved.
RFC.
To + 1
ACTIVE
ROW
ROW
BANK
Timing Diagrams
DON’T CARE
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