MT45W1MW16BDGB-701 WT TR Micron Technology Inc, MT45W1MW16BDGB-701 WT TR Datasheet - Page 22

IC PSRAM 16MBIT 70NS 54VFBGA

MT45W1MW16BDGB-701 WT TR

Manufacturer Part Number
MT45W1MW16BDGB-701 WT TR
Description
IC PSRAM 16MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc

Specifications of MT45W1MW16BDGB-701 WT TR

Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1209-2
MT45W1MW16BDGB-701 WT TR
Figure 16:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
Read Configuration Register
Note:
ADDRESS
LB#/UB#
DATA
WE#
OE#
If the data present when WE# falls is not 0000h or 0001h, it is possible that the maximum
address will be overwritten.
CE#
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
ADDRESS
(MAX)
XXXXh
READ
ADDRESS
XXXXh
(MAX)
READ
22
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RCR: 0000h
BCR: 0001h
ADDRESS
WRITE
(MAX)
Note: 0ns (Min)
ADDRESS
Configuration Registers
READ
(MAX)
DON'T CARE
CR VALUE
OUT
©2005 Micron Technology, Inc. All rights reserved.

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