MT45W1MW16BDGB-701 WT TR Micron Technology Inc, MT45W1MW16BDGB-701 WT TR Datasheet - Page 56
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MT45W1MW16BDGB-701 WT TR
Manufacturer Part Number
MT45W1MW16BDGB-701 WT TR
Description
IC PSRAM 16MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W1MW16BDGB-708_AT_TR.pdf
(59 pages)
Specifications of MT45W1MW16BDGB-701 WT TR
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1209-2
MT45W1MW16BDGB-701 WT TR
MT45W1MW16BDGB-701 WT TR
Figure 46:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
Asynchronous WRITE Followed by Asynchronous READ
Notes:
DQ[15:0]
1. When configured for synchronous mode (BCR[15] = 0), CE# must remain HIGH for at least
LB#/UB#
A[19:0]
IN/OUT
ADV#
WAIT
5ns (
required after CE#-controlled WRITEs.
WE#
OE#
CE#
t
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
CPH) to schedule the appropriate internal refresh operation. Otherwise,
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
t VPH
High-Z
VALID ADDRESS
t AVS
t AS
t VP
t CVS
t CW
t WP
DATA
t AVH
t DH
t WPH
t WC
t AS
VALID ADDRESS
t AW
t BW
t VS
56
t DW
DATA
t WR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t CPH
1
t VP
V
V
t CVS
t AVS
OH
OL
VALID ADDRESS
t AVH
High-Z
t BLZ
t LZ
t AADV
t CO
t AA
t OLZ
DON’T CARE
©2005 Micron Technology, Inc. All rights reserved.
t OE
Timing Diagrams
OUTPUT
VALID
UNDEFINED
t HZ
t
t OHZ
CPH is only
t BHZ