MT48H16M16LFBF-75:G TR Micron Technology Inc, MT48H16M16LFBF-75:G TR Datasheet - Page 61
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MT48H16M16LFBF-75:G TR
Manufacturer Part Number
MT48H16M16LFBF-75:G TR
Description
IC SDRAM 256MBIT 132MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Specifications of MT48H16M16LFBF-75:G TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
256M (16Mx16)
Speed
132MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
8/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
80mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1326-2
Figure 32: Alternating Bank Write Accesses
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Command
BA0, BA1
Address
DQM
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
Bank 0
ACTIVE
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
t RCD - bank 0
t RAS - bank 0
t RC - bank 0
t RRD
t CK
T1
Note:
NOP
Enable auto precharge
t CMS
t CL
1. For this example, BL = 4.
Column m
t DS
Bank 0
WRITE
T2
D
t CMH
IN
t DH
t CH
t DS
T3
NOP
D
IN
t DH
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
t DS
Bank 1
ACTIVE
Row
T4
Row
D
IN
t DH
61
t RCD - bank 1
t DS
T5
D
NOP
IN
t DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t WR - bank 0
Enable auto precharge
t DS
Column b
Bank 1
WRITE
T6
D
IN
t DH
t DS
T7
NOP
D
IN
t DH
t RP - bank 0
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WRITE Operation
t DS
T8
NOP
D
IN
t DH
t DS
Bank 0
Row
Row
T9
ACTIVE
D
t RCD - bank 0
t WR - bank 1
IN
t DH
Don’t Care