NAND01GW3B2AN6F STMicroelectronics, NAND01GW3B2AN6F Datasheet - Page 44
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NAND01GW3B2AN6F
Manufacturer Part Number
NAND01GW3B2AN6F
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND01GW3B2CN6E.pdf
(61 pages)
Specifications of NAND01GW3B2AN6F
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2AN6F
Manufacturer:
ST
Quantity:
101
DC and AC parameters
Table 22.
1. Leakage current and standby current double in stacked devices.
Table 23.
1. Leakage current and standby current double in stacked devices.
44/61
I
Symbol
I
Symbol
OL
OL
V
I
I
I
I
I
V
V
V
V
I
I
I
I
V
DD1
DD2
DD3
DD4
DD5
I
V
V
V
I
DD1
DD2
DD3
DD5
I
V
LKO
LO
OH
I
LKO
LI
OL
(RB)
LO
IH
OH
IL
LI
OL
(RB)
IH
IL
Operating current
DC characteristics, 1.8 V devices
Operating current
DC characteristics, 3 V devices
V
V
DD
Standby current (CMOS)
DD
Standby current (CMOS)
Output leakage current
Output high voltage level
Standby current (TTL)
Output low voltage level
Output low current (RB)
Output leakage current
Input leakage current
Output high voltage level
Output low voltage level
Output low current (RB)
Input leakage current
supply voltage (erase and
supply voltage (erase and
Input high voltage
Input low voltage
program lockout)
Input high voltage
Input low voltage
program lockout)
Parameter
Parameter
Sequential
Sequential
Program
Program
Erase
Read
Erase
(1)
read
(1)
(1)
(1)
(1)
(1)
(1)
E = V
V
E = V
V
E = V
V
V
OUT
OUT
Test conditions
Test conditions
IN
t
IN
E = V
I
t
RLRL
E = V
I
OH
RLRL
I
OH
WP = 0/V
I
OL
V
WP = 0/V
= 0 to V
OL
V
= 0 to V
IH
IL,
= 0 to V
OL
IL,
= 0 to V
OL
= –400 µA
, WP = 0/V
= 2.1 mA
= –100 µA
= 100 µA
I
minimum
I
DD
OUT
= 0.4 V
minimum
DD
OUT
= 0.1 V
–
–
–
–
–
–
–
–
–
–
– 0.2,
– 0.2,
DD
DD
= 0 mA
= 0 mA
DD
DD
DD
DD
max
max
max
max
DD
V
V
0.8V
DD
DD
Min
-0.3
-0.3
Min
2.4
–
–
–
–
–
–
–
8
–
–
3
–
-
-
-
-
-
-
NAND01G-B2B, NAND02G-B2C
- 0.4
- 0.1
DD
Typ
Typ
10
10
10
10
10
10
–
–
–
–
–
–
–
8
8
8
–
–
–
–
–
–
4
–
V
V
0.2V
DD
DD
Max
Max
±10
±10
±10
±10
0.4
0.1
1.1
0.4
1.7
15
15
15
50
20
20
20
50
–
1
–
+ 0.3
+ 0.3
DD
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V