M45PE80-VMN6TP NUMONYX, M45PE80-VMN6TP Datasheet - Page 38

• Manufacturer Part Number: M45PE80-VMN6TP
• Description: IC FLASH 8MBIT 50MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M45PE80-VMN6TP

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Package: 8SOIC N
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 64KByte x 16
• Timing Type: Synchronous
• Interface Type: Serial-SPI
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M45PE80-VMN6TPCT

Table 14.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
4. When using PP and PW instructions to update consecutive Bytes, optimized timings are obtained with one sequence
5. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
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Symbol
t
t
t
WHSL
SHWL
SHQZ
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
DVCH
CHDX
CHSH
SHCH
PW
CLQV
CLQX
CH
SLCH
CHSL
SHSL
DP
PP
CL
including all the Bytes versus several sequences of only a few Bytes (1 . n . 256).
t
t
t
CH
f
f
PE
SE
W
C
R
(1)
(1)
(2)
(4)
(4)
(2)
(2)
+ t
(3)
(3)
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
DSU
t
CSH
t
CLH
CSS
CLL
DIS
HO
f
DH
t
AC characteristics (75 MHz operation)
C
V
Clock frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE,
SSE, DP, RDP, WREN, WRDI, RDSR, WRCR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock slew rate
S active setup time (relative to C)
S not active hold time (relative to C)
Data in setup time
Data in hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock Low to Output Valid under 30 pF / 10 pF
Output hold time
Write Protect setup time
Write Protect hold time
S to Deep Power-down
S High to Standby mode
Write status register cycle time
Page Write cycle time (256 bytes)
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Page Erase cycle time
Sector Erase cycle time
Test conditions specified in
(2)(2)
Parameter
(peak to peak)
C
Table 8
Min.
D.C.
D.C.
100
100
0.1
20
6
6
5
5
2
5
5
5
0
and
Table 9
int(n/8) × 0.025
Typ.
0.8
10
11
3
1
(5)
Max.
8/6
75
33
30
15
23
20
8
3
3
5
MHz
MHz
V/ns
Unit
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
μs
s