NAND01GR3B2BZA6E NUMONYX, NAND01GR3B2BZA6E Datasheet - Page 10
NAND01GR3B2BZA6E
Manufacturer Part Number
NAND01GR3B2BZA6E
Description
IC FLASH 1GBIT 63VFBGA
Manufacturer
NUMONYX
Datasheet
1.NAND01GW3B2CN6E.pdf
(61 pages)
Specifications of NAND01GR3B2BZA6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GR3B2BZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Description
Table 3.
10/61
I/O8-15
Signal
I/O0-7
V
V
WP
RB
NC
DU
CL
AL
W
E
R
DD
SS
Signal names
Data input/outputs for x16 devices
Data input/outputs, address inputs, or command inputs
for x8 and x16 devices
Address Latch Enable
Command Latch Enable
Chip Enable
Read Enable
Ready/Busy (open-drain output)
Write Enable
Write Protect
Supply voltage
Ground
Not connected internally
Do not use
Function
NAND01G-B2B, NAND02G-B2C
Direction
Ground
Supply
Output
Input
Input
Input
Input
Input
Input
I/O
I/O
–
–