NAND01GR3B2BZA6E NUMONYX, NAND01GR3B2BZA6E Datasheet - Page 35

IC FLASH 1GBIT 63VFBGA

NAND01GR3B2BZA6E

Manufacturer Part Number
NAND01GR3B2BZA6E
Description
IC FLASH 1GBIT 63VFBGA
Manufacturer
NUMONYX
Datasheet

Specifications of NAND01GR3B2BZA6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND01GR3B2BZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
NAND01GR3B2BZA6E
Manufacturer:
ST
0
NAND01G-B2B, NAND02G-B2C
7
Data protection
The device has hardware features to protect against program and erase operations.
It features a Write Protect, WP, pin, which can be used to protect the device against program
and erase operations. It is recommended to keep WP at V
down.
In addition, to protect the memory from any involuntary program/erase operations during
power-transitions, the device has an internal voltage detector which disables all functions
whenever V
DD
is below V
LKO
(see
Table 22
and
Table
23).
IL
during power-up and power-
Data protection
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