NAND01GW3B2BZA6E NUMONYX, NAND01GW3B2BZA6E Datasheet - Page 44

• Manufacturer Part Number: NAND01GW3B2BZA6E
• Description: IC FLASH 1GBIT 63VFBGA
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2BZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

DC and AC parameters
Table 22.
1. Leakage current and standby current double in stacked devices.
Table 23.
1. Leakage current and standby current double in stacked devices.
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I
Symbol
I
Symbol
OL
OL
V
I
I
I
I
I
V
V
V
V
I
I
I
I
V
DD1
DD2
DD3
DD4
DD5
I
V
V
V
I
DD1
DD2
DD3
DD5
I
V
LKO
LO
OH
I
LKO
LI
OL
(RB)
LO
IH
OH
IL
LI
OL
(RB)
IH
IL
Operating current
DC characteristics, 1.8 V devices
Operating current
DC characteristics, 3 V devices
V
V
DD
Standby current (CMOS)
DD
Standby current (CMOS)
Output leakage current
Output high voltage level
Standby current (TTL)
Output low voltage level
Output low current (RB)
Output leakage current
Input leakage current
Output high voltage level
Output low voltage level
Output low current (RB)
Input leakage current
supply voltage (erase and
supply voltage (erase and
Input high voltage
Input low voltage
program lockout)
Input high voltage
Input low voltage
program lockout)
Parameter
Parameter
Sequential
Sequential
Program
Program
Erase
Read
Erase
(1)
read
(1)
(1)
(1)
(1)
(1)
(1)
E = V
V
E = V
V
E = V
V
V
OUT
OUT
Test conditions
Test conditions
IN
t
IN
E = V
I
t
RLRL
E = V
I
OH
RLRL
I
OH
WP = 0/V
I
OL
V
WP = 0/V
= 0 to V
OL
V
= 0 to V
IH
IL,
= 0 to V
OL
IL,
= 0 to V
OL
= –400 µA
, WP = 0/V
= 2.1 mA
= –100 µA
= 100 µA
I
minimum
I
DD
OUT
= 0.4 V
minimum
DD
OUT
= 0.1 V
–
–
–
–
–
–
–
–
–
–
– 0.2,
– 0.2,
DD
DD
= 0 mA
= 0 mA
DD
DD
DD
DD
max
max
max
max
DD
V
V
0.8V
DD
DD
Min
-0.3
-0.3
Min
2.4
–
–
–
–
–
–
–
8
–
–
3
–
-
-
-
-
-
-
NAND01G-B2B, NAND02G-B2C
- 0.4
- 0.1
DD
Typ
Typ
10
10
10
10
10
10
–
–
–
–
–
–
–
8
8
8
–
–
–
–
–
–
4
–
V
V
0.2V
DD
DD
Max
Max
±10
±10
±10
±10
0.4
0.1
1.1
0.4
1.7
15
15
15
50
20
20
20
50
–
1
–
+ 0.3
+ 0.3
DD
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V