IDT71024S12Y IDT, Integrated Device Technology Inc, IDT71024S12Y Datasheet - Page 2
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IDT71024S12Y
Manufacturer Part Number
IDT71024S12Y
Description
IC SRAM 1MBIT 12NS 32SOJ
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet
1.IDT71024S15YG8.pdf
(8 pages)
Specifications of IDT71024S12Y
Format - Memory
RAM
Memory Type
SRAM
Memory Size
1M (128K x 8)
Speed
12ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-SOJ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
71024S12Y
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IDT71024S12Y
Manufacturer:
IDT
Quantity:
3 590
Company:
Part Number:
IDT71024S12Y
Manufacturer:
IDT
Quantity:
3 590
Company:
Part Number:
IDT71024S12Y
Manufacturer:
IDT
Quantity:
5 530
Company:
Part Number:
IDT71024S12YG
Manufacturer:
IDT Integrated Device Technolo
Quantity:
135
Pin Configuration
Truth Table
NOTES:
1. H = V
2. V
3. Other inputs ≥V
Recommended Operating
Temperature and Supply Voltage
IDT71024 CMOS Static RAM
1 Meg (128K x 8-Bit)
WE
Commercial
X
X
X
X
H
H
L
Industrial
LC
Grade
= 0.2V, V
IH
V
CS
, L = V
HC
H
X
X
L
L
L
Inputs
(2)
1
IL
HC
, X = Don't care.
V
HC
CS
= V
LC
X
X
H
H
H
L
or ≤V
(2)
2
CC
–40°C to +85°C
0°C to +70°C
Temperature
–0.2V.
(1,3)
LC.
OE
X
X
X
X
X
H
L
Top View
DATA
SOJ
DATA
High-Z
High-Z
High-Z
High-Z
High-Z
I/O
OUT
IN
Deselected – Standby (I
Deselected – Standby (I
Deselected – Standby (I
Deselected – Standby (I
Outputs Disabled
Read Data
Write Data
GND
0V
0V
Function
5.0V ± 0.5V
5.0V ± 0.5V
V
CC
2964 tbl 01
2964 tbl 05
SB
SB1
SB
SB1
)
)
)
)
6.42
2
Absolute Maximum Ratings
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
2. V
Capacitance
(T
NOTE:
1. This parameter is guaranteed by device characterization, but is not production tested.
Recommended DC Operating
Conditions
NOTE:
1. V
P
I
V
T
T
OUT
BIAS
STG
Symbol
Symbol
T
TERM
A
Symbol
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
GND
V
C
V
V
C
TERM
= +25°C, f = 1.0MHz, SOJ package)
IL
CC
I/O
IH
IL
IN
(min.) = –1.5V for pulse width less than 10ns, once per cycle.
(2)
must not exceed V
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Capacitance
I/O Capacitance
Storage Temperature
Power Dissipation
DC Output Current
Terminal Voltage with Respect to GND
Temperature Under Bias
Commercial and Industrial Temperature Ranges
Parameter
Parameter
CC
+ 0.5V.
Rating
(1)
–0.5
V
Min.
Conditions
4.5
2.2
V
OUT
0
IN
(1)
= 3dV
= 3dV
Typ.
5.0
____
____
0
–0.5 to +7.0
–55 to +125
–55 to +125
Value
1.25
50
V
Max.
(1)
CC
Max.
7
8
5.5
0.8
0
+0.5
2964 tbl 03
2964 tbl 02
2964 tbl 04
Unit
Unit
pF
pF
mA
Unit
o
o
W
V
C
C
V
V
V
V