IDT71P71804S200BQ IDT, Integrated Device Technology Inc, IDT71P71804S200BQ Datasheet - Page 14
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IDT71P71804S200BQ
Manufacturer Part Number
IDT71P71804S200BQ
Description
IC SRAM 18MBIT 200MHZ 165FBGA
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet
1.IDT71P71604S167BQ8.pdf
(23 pages)
Specifications of IDT71P71804S200BQ
Format - Memory
RAM
Memory Type
SRAM - Synchronous, DDR II
Memory Size
18M (1M x 18)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-FBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
71P71804S200BQ
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IDT71P71804S200BQ
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Company:
Part Number:
IDT71P71804S200BQ8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Company:
Part Number:
IDT71P71804S200BQG
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Company:
Part Number:
IDT71P71804S200BQG8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Timing Waveform of Combined Read and Write Cycles
NOTE:
1. If a R/W is low on the next rising edge of K after a read request, the device automatically performs a NOP (No Operation.)
2. The second NOP cycle is not necessary for correct device operation; however, at high clock frequencies, it may be required to prevent
18 Mb DDR II SRAM Burst of 2
IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit)
the bus contention.
K
DQ
LD
CQ
R/W
CQ
K
SA
C
C
NOP
1
Qx1
tKHCH
tKHKL
tIVKH
tKLKH
tAVKH
Read A0
(burst of 2)
A0
2
tKHAX
tKHCH
tKHKH
tKHIX
Read A1
(burst of 2)
tCHCQV
tCHCQX
A1
tCHQX1
3
tCHQV
tKHKH
(NOTE 1)
Q00
NOP
4
Q01
tCHQX
tCHQV
NOP
(Note 1)
(NOTE 2)
Q10
5
Q11
6.42
tCHCQX
tCHCQV
14
Write A2
(burst of 2)
A2
6
tCHQX
tCHQZ
tDVKH
tKHKL
tKHDX
tKLKH
Write A3
(burst of 2)
D20
A3
7
D21
tKHKH
Read A4
(burst of 2)
tDVKH
A4
tKHDX
D30
8
tKHKH
D31
Commercial Temperature Range
9
tCQHQV
6112 drw09
Q40
tCQHQX
10
Q41