TE28F320C3BD70 Intel, TE28F320C3BD70 Datasheet - Page 56
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TE28F320C3BD70
Manufacturer Part Number
TE28F320C3BD70
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
Intel
Specifications of TE28F320C3BD70
Rohs Status
RoHS non-compliant
Format - Memory
FLASH
Memory Type
Advanced + Boot Block FLASH
Memory Size
32M (2M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Other names
855810
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TE28F320C3BD70
Manufacturer:
SAMSUNG
Quantity:
6 000
Part Number:
TE28F320C3BD70
Manufacturer:
INFTEL
Quantity:
20 000
Intel
56
Figure 17. Locking Operations Flowchart
£
Advanced+ Boot Block Flash Memory (C3)
0x01/0xD0/0x2F,
Block Address
Block Address
Lock Change
Any Address
Write either
Read Block
Lock Status
Write 0x60,
Write 0xFF
Write 0x90
Complete
Change?
Locking
Start
Yes
No
(Read Device ID)
(Lock Confirm)
(Read Array)
(Lock Setup)
LOCKING OPERATIONS PROCEDURE
Operation
(Optional)
(Optional)
(Optional)
Write
Write
Write
Read
Write
Bus
Idle
Command
Lock-Down
Block Lock
Unlock, or
Device ID
Confirm
Status
Setup
Lock,
Read
None
Read
Array
Lock
Data = 0x60
Addr = Any Address
Data = 0x01 (Block Lock)
Addr = Block to lock/unlock/lock-down
Data = 0x90
Addr = Any Address
Block Lock status data
Addr = Block address + offset 2
Confirm locking change on D[1,0] .
Data = 0xFF
Addr = Any address
0xD0 (Block Unlock)
0x2F (Lock-Down Block)
Comments
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