SDED7-256M-N9T SanDisk, SDED7-256M-N9T Datasheet - Page 78

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SDED7-256M-N9T

Manufacturer Part Number
SDED7-256M-N9T
Description
IC MDOC H3 2GB 115-FBGA
Manufacturer
SanDisk
Datasheet

Specifications of SDED7-256M-N9T

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
1.65 V ~ 1.95 V
Operating Temperature
-25°C ~ 85°C
Package / Case
115-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Other names
585-1211-2
SDED7-256M-N9T

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Rev. 1.3
Notes: 1. Specified from the final positive crossing of VCC/VCC1/VCC2/VCCQ minimum
78
T
Tsu (RSTIN-AVD)
T
REC
Tsu (BUSY-CE)
P
Trise (RSTIN)
2. Applies to multiplexed interface only.
3. T
T
T
T
(VCC-BUSY0)
W
P
P
Symbol
(VCC-RSTIN)
(BUSY0)
(BUSY1)
(RSTIN)
voltages.
unformatted devices this time may be up to one second.
P
(BUSY1) depends on IPL mode (Normal / Paged ) and device capacity. For
VCC/VCCQ stable to RSTIN#
RSTIN# asserted pulse width
RSTIN#
RSTIN#
VCC/VCCQ stable to BUSY#
RSTIN#
BUSY#
RSTIN# rise time
Table 23: Power-Up Timing Parameters
Figure 34: Reset Timing
to CE#
to BUSY#
to BUSY#
to AVD#
Description
2
3
mDOC H3 EFD Featuring Embedded TrueFFS Data Sheet
1
Min
500
50
3
0
Product Specifications
Max
500
50
75
20
92-DS-1205-10
Units
ms
μs
μs
μs
μs
ns
ns
ns

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