ISL6209CBZ Intersil, ISL6209CBZ Datasheet - Page 8

• Manufacturer Part Number: ISL6209CBZ
• Description: IC MOSFET DRVR SYNC BUCK 8-SOIC
• Manufacturer: Intersil

Specifications of ISL6209CBZ

• Configuration: High and Low Side, Synchronous
• Input Type: PWM
• Delay Time: 20ns
• Current - Peak: 2A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 33V
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -10°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

A good layout would help reduce the ringing on the phase
and gatenodes significantly:
NOTE: Refer to Intersil Tech Brief TB447 for more information.
1. Avoid using vias for decoupling components where
2. All power traces (UGATE, PHASE, LGATE, GND, VCC)
3. Keep the SOURCE of the upper FET as close as
4. Keep the connection in between the SOURCE of lower
5. Input capacitors should be placed as close to the DRAIN
possible, especially in the BOOT-to-PHASE path. Little or
no use of vias for VCC and GND is also recommended.
Decoupling loops should be short.
should be short and wide, and avoid using vias. If vias
must be used, two or more vias per layer transition is
recommended.
thermally possible to the DRAIN of the lower FET.
FET and power ground wide and short.
of the upper FET and the SOURCE of the lower FET as
thermally possible.
8
ISL6209
Thermal Management
For maximum thermal performance in high current, high
switching frequency applications, connecting the thermal
pad of the QFN part to the power ground with multiple vias,
or placing a low noise copper plane underneath the SOIC
part is recommended. This heat spreading allows the part to
achieve its full thermal potential.
Suppressing MOSFET Gate Leakage
With VCC at ground potential, UGATE and LGATE are high
impedance. In this state, any stray leakage has the potential
to deliver charge to either gate. If UGATE receives sufficient
charge to bias the device on (Note: Internal circuitry prevents
leakage currents from charging above 1.8V), a low
impedance path will be connected between the MOSFET
drain and PHASE. If the input power supply is present and
active, the system could see potentially damaging currents.
Worst-case leakage currents are on the order of pico-amps;
therefore, a 10kΩ resistor, connected from UGATE to
PHASE, is more than sufficient to bleed off any stray leakage
current. This resistor will not affect the normal performance
of the driver or reduce its efficiency.