VNB35NV04 STMicroelectronics, VNB35NV04 Datasheet
VNB35NV04
Specifications of VNB35NV04
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VNB35NV04 Summary of contents
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... DIAGNOSTIC FEEDBACK THROUGH INPUT PIN n ESD PROTECTION n DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) n COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, BLOCK DIAGRAM INPUT 1 March 2004 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 V ...
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... VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 ABSOLUTE MAXIMUM RATING Symbol Parameter V Drain-source Voltage ( Input Voltage IN I Input Current IN R Minimum Input Series Impedance IN MIN I Drain Current D I Reverse DC Output Current R V Electrostatic Discharge (R=1.5K , C=100pF) ESD1 Electrostatic Discharge on output pin only V ESD2 (R=330 , C=150pF) ...
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... Input-Source Clamp V INCL Voltage Zero Input Voltage Drain I DSS Current (V =0V Symbol Parameter Static Drain-source On R DS(on) Resistance VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 ™ PowerSO-10 MAX 1 50(*) (at least 35 m thick) connected to all DRAIN pins. < 150°C, unless otherwise specified) j Test Conditions V =0V; I =15A =0V ...
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... VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 ELECTRICAL CHARACTERISTICS (continued) (T DYNAMIC Symbol Parameter Forward g (*) fs Transconductance C Output Capacitance OSS SWITCHING Symbol Parameter t Turn-on Delay Time d(on) t Rise Time r t Turn-off Delay Time d(off) t Fall Time f t Turn-on Delay Time d(on) t Rise Time r t Turn-off Delay Time ...
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... T . jsh VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 ° ...
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... VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 Fig.1: Switching Time Test Circuit for Resistive Load d(on) V gen Fig.2: Test Circuit for Diode Recovery Times I OMNIFET 25 6/ gen V gen 90 10% t d(off FAST DIODE gen I OMNIFET V gen t t L=100uH 8.5 ...
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... Fig. 3: Unclamped Inductive Load Test Circuits R GEN Fig. 5: Input Charge Test Circuit GEN V IN Fig. 7:Thermal Impedance for TO-247 VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 Fig. 4: Unclamped Inductive Waveforms Fig 6 : Thermal Impedance for TO-220 ND8003 7/19 ...
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... VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 Source-Drain Diode Forward Characteristics Vsd (mV) 950 900 Vin=0V 850 800 750 700 650 (A) PowerSO-10 Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mOhm) 27.5 25 Id=15A Id=7.5A 22.5 20 Id=15A Id=7.5A 17.5 15 Id=15A Id=7.5A 12.5 Tj=25° 2.5 3 3.5 4 4.5 ...
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... Vds (V) Turn On Current Slope di/dt (A/us) 20 17.5 Vin=5V 15 Vdd=15V Id=15A 12.5 10 7 150 300 450 600 Rg (Ohm) VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 Transfer Characteristics Idon (A) 50 Tj=-40ºC 45 Tj=25ºC 40 Tj=150º Tj=25º 1.5 Normalized On Resistance Vs. Temperature Rds(on) (mOhm ...
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... VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 Input Voltage Vs. Input Charge Vin ( Vds=12V Id=15A 100 Qg (nC) Turn Off Drain-Source Voltage Slope dV/dt (V/us) 160 140 Vin=3.5V 120 Vdd=15V Id=15A 100 150 300 450 600 Rg (Ohm) Switching Time Resistive Load T (ns) 1750 Vdd=15V tr 1500 Id=15A Rg=4 ...
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... Current Limit Vs. Junction Temperature Ilim (A) 100 90 Vin=6V Vds=13V -50 - (ºC) Derating Curve VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 Step Response Current Limit Tdlim (us) 180 160 140 120 100 100 125 150 175 Vin= Vdd ( 11/19 ...
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... VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 DIM L20 L30 P Q Package Weight 12/19 TO-220 MECHANICAL DATA mm. MIN. TYP 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 1.9Gr. (Typ.) MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5 ...
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... TO-247 MECHANICAL DATA DIM. MIN. A 4.7 D 2 15.3 L 19 Dia. 3. VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 mm. TYP MAX. MIN. 5.3 0.185 2.6 0.087 0.8 0.016 1.4 0.039 2.4 0.079 3.4 0.118 10.9 15.9 0.602 20.3 0.776 14.8 0.559 34.6 5.5 3 0.079 3.65 ...
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... VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 PowerSO-10™ MECHANICAL DATA DIM. MIN. A 3.35 A (*) 3.4 A1 0.00 B 0.40 B (*) 0.37 C 0.35 C (*) 0.23 D 9.40 D1 7.40 E 9.30 E2 7.20 E2 (*) 7.30 E4 5.90 E4 (*) 5. 1.25 F (*) 1.20 H 13.80 H (*) 13. 1.20 L (*) 0.80 0º (*) 2º (*) Muar only POA P013P 0. 14/19 mm. TYP MAX. 3.65 3.6 ...
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... VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 2 D PAK MECHANICAL DATA DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1 0º mm. TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 8 10.4 8.5 5.28 15.85 1.4 1.75 3.2 0.4 8º ...
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... VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 TO-220 TUBE SHIPMENT (no suffix 16/19 Base Q.ty Bulk Q.ty Tube length (± 0. (± 0.1) All dimensions are in mm 1000 532 5.5 31.4 0.75 ...
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... Hole Diameter D1 (min) Hole Position F (± 0.05) Compartment Depth K (max) Hole Spacing P1 (± 0.1) All dimensions are in mm. VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 TUBE SHIPMENT (no suffix 0.67 - 0.73 0.54 - 0.6 All dimensions are in mm. 1.27 Base Q.ty Bulk Q.ty Tube length (± 0.5) A ...
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... VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 2 D PAK FOOTPRINT 16.90 12.20 3.50 9.75 All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix “13TR”) TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width W Tape Hole Spacing P0 (± 0.1) ...
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... STMicroelectronics - Printed in ITALY- All Rights Reserved. Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04 The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com ...