VNB35NV04 STMicroelectronics, VNB35NV04 Datasheet - Page 4

• Manufacturer Part Number: VNB35NV04
• Description: MOSFET N-CH 40V 30A D2PAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNB35NV04

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 13 mOhm
• Current - Peak Output: 45A
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Switch Type: Low Side
• Power Switch Family: VNB35NV04
• Power Switch On Resistance: 13mOhm
• Output Current: 30A
• Supply Current: 100uA
• Package Type: D2PAK
• Mounting: Surface Mount
• Power Dissipation: 125W
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: 497-2671-5

VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
ELECTRICAL CHARACTERISTICS (continued) (T
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
PROTECTIONS (-40°C < T
(*) Pulsed: Pulse duration = 300 s, duty cycle 1.5%
4/19
2
Symbol
Symbol
Symbol
Symbol
(di/dt)
V
g
C
t
t
t
t
I
SD
t
T
d(on)
d(off)
d(on)
d(off)
RRM
E
fs
T
Q
I
dlim
OSS
Q
I
t
lim
t
t
t
t
jsh
gf
rr
jrs
as
r
r
f
f
rr
(*)
i
(*)
on
Forward
Transconductance
Output Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Drain Current Limit
Step Response Current
Limit
Overtemperature
Shutdown
Overtemperature Reset
Fault Sink Current
Single Pulse
Avalanche Energy
Parameter
Parameter
Parameter
Parameter
j
< 150°C, unless otherwise specified)
V
V
V
V
(see figure 1)
V
V
(see figure 1)
V
V
V
I
I
I
V
(see test circuit, figure 2)
V
V
V
starting T
V
(see figures 3 & 4)
gen
SD
SD
DD
DS
DD
gen
DD
gen
DD
gen
DD
DD
IN
IN
IN
IN
=15A; V
=15A; dI/dt=100A/ s
=6V; V
=6V; V
=5V; V
=5V; R
=13V; f=1MHz; V
=13V; I
=15V; I
=15V; I
=15V; I
=12V; I
=2.13mA (see figure 5)
=30V; L=200 H
=5V; R
=5V; R
=5V; R
j
=25°C; V
DS
DS
DS
gen
Test Conditions
D
Test Conditions
Test Conditions
Test Conditions
D
D
D
D
gen
gen
gen
IN
=15A
=15A
=15A
=15A
=15A; V
=13V
=13V
=13V; T
=0V
=R
=R
=2.2K
=R
IN MIN
j
IN MIN
IN MIN
=25°C, unless otherwise specified)
DD
IN
j
IN
=T
=24V
=4.7
=5V
=0V
=4.7
=4.7
jsh
L=24mH
Min
Min
Min
150
135
Min
1.7
30
10
1300
Typ
Typ
Typ
840
400
175
150
980
600
118
Typ
0.8
1.4
27
34
31
18
45
50
15
35
7
4
2500
3000
1500
Max
Max
Max
Max
500
100
120
110
200
60
20
12
A/ s
Unit
Unit
Unit
Unit
mA
nC
ns
°C
°C
pF
ns
ns
ns
ns
V
A
A
S
J
C
s
s
s
s
s