BUK1M200-50SGTD,51 NXP Semiconductors, BUK1M200-50SGTD,51 Datasheet - Page 10

• Manufacturer Part Number: BUK1M200-50SGTD,51
• Description: MOSFET N-CH 50V 20SOIC
• Manufacturer: NXP Semiconductors
• Series: TOPFET™r
• Type: Low Sider

Specifications of BUK1M200-50SGTD,51

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 1.3A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Peak Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057351518

Philips Semiconductors
9397 750 10955
Product data
Fig 18. Overvoltage clamping characteristic; drain
V
(mA)
400
300
200
100
IS
I D
0
= 0 V; t
current as a function of drain-source voltage;
typical values.
57
p
= 300 s
59
61
63
65
V DS (V)
03pa83
67
Rev. 01 — 31 March 2003
Fig 19. Drain-source leakage current as a function of
V
I DSS
10 -5
10 -6
10 -7
10 -8
(A)
DS
junction temperature; typical values.
= 40 V; V
-50
BUK1M200-50SGTD
IS
= 0 V
0
Quad channel logic level TOPFET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
50
100
T j ( C)
03pa84
150
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