BUK1M200-50SGTD,51 NXP Semiconductors, BUK1M200-50SGTD,51 Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BUK1M200-50SGTD,51
Manufacturer Part Number
BUK1M200-50SGTD,51
Description
MOSFET N-CH 50V 20SOIC
Manufacturer
NXP Semiconductors
Series
TOPFET™r
Type
Low Sider
Datasheet
1.BUK1M200-50SGTD51.pdf
(15 pages)
Specifications of BUK1M200-50SGTD,51
Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
150 mOhm
Current - Output / Channel
1.3A
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
20-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Current - Peak Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057351518
Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 10955
Product data
Symbol
R
Fig 4. Normalized total power dissipation as a
th(j-sp)
P der
P
(%)
120
der
80
40
0
function of solder point temperature.
0
=
Parameter
thermal resistance from junction to
solder point.
Thermal characteristics
---------------------- -
P
tot 25 C
P
tot
50
100%
100
150
T sp ( C)
03aa17
Conditions
mounted on thermo clad board
200
one device active
all devices active
Rev. 01 — 31 March 2003
Fig 5. Continuous drain current as a function of
3.00
2.00
1.00
0.00
(A)
I D
solder point temperature.
0
BUK1M200-50SGTD
40
Quad channel logic level TOPFET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Min
-
-
80
Typ
-
-
120
T sp ( C)
03pa87
Max
45
13.3
160
Unit
K/W
K/W
5 of 15