BUK1M200-50SGTD,51 NXP Semiconductors, BUK1M200-50SGTD,51 Datasheet - Page 5

• Manufacturer Part Number: BUK1M200-50SGTD,51
• Description: MOSFET N-CH 50V 20SOIC
• Manufacturer: NXP Semiconductors
• Series: TOPFET™r
• Type: Low Sider

Specifications of BUK1M200-50SGTD,51

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 1.3A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Peak Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057351518

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 10955
Product data
Symbol
R
Fig 4. Normalized total power dissipation as a
th(j-sp)
P der
P
(%)
120
der
80
40
0
function of solder point temperature.
0
=
Parameter
thermal resistance from junction to
solder point.
Thermal characteristics
---------------------- -
P
tot 25 C
P
tot
50
100%
100
150
T sp ( C)
03aa17
Conditions
mounted on thermo clad board
200
one device active
all devices active
Rev. 01 — 31 March 2003
Fig 5. Continuous drain current as a function of
3.00
2.00
1.00
0.00
(A)
I D
solder point temperature.
0
BUK1M200-50SGTD
40
Quad channel logic level TOPFET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Min
-
-
80
Typ
-
-
120
T sp ( C)
03pa87
Max
45
13.3
160
Unit
K/W
K/W
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