BUK1M200-50SGTD,51 NXP Semiconductors, BUK1M200-50SGTD,51 Datasheet - Page 8

• Manufacturer Part Number: BUK1M200-50SGTD,51
• Description: MOSFET N-CH 50V 20SOIC
• Manufacturer: NXP Semiconductors
• Series: TOPFET™r
• Type: Low Sider

Specifications of BUK1M200-50SGTD,51

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 1.3A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Peak Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057351518

Philips Semiconductors
9397 750 10955
Product data
Fig 10. Drain current trip threshold as a function of
Fig 12. Overtemperature protection characteristic;
I D(th)(trip)
(A)
T
V
T j(th)
j
200
( C)
190
180
170
160
DS
= 25 C; t
9
6
3
0
junction temperature; typical values.
threshold junction temperature as a function of
input-source voltage; typical values.
= 5 V; V
-50
0
p
IS
= 300 s
2
= 5 V; t
0
p
4
= 300 s
50
6
100
8
T j ( C)
V IS (V)
03pb 02
03pa76
150
10
Rev. 01 — 31 March 2003
Fig 11. Drain current trip threshold as a function of
Fig 13. Input-source threshold voltage as a function of
I D(th)(trip)
V IS(th)
(A)
T
T
(V)
j
j
2.5
1.5
0.5
= 25 C; V
= 25 C; V
9
6
3
0
2
1
0
input-source voltage; typical values.
junction temperature.
-50
0
BUK1M200-50SGTD
DS
DS
= 10 V; t
= 5 V; t
0
Quad channel logic level TOPFET
2
p
p
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
= 300 s
= 300 s
50
max.
typ.
min.
4
100
V IS (V)
T j ( C)
03pb 01
03pa77
150
6
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