BUK1M200-50SGTD,51 NXP Semiconductors, BUK1M200-50SGTD,51 Datasheet - Page 8
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BUK1M200-50SGTD,51
Manufacturer Part Number
BUK1M200-50SGTD,51
Description
MOSFET N-CH 50V 20SOIC
Manufacturer
NXP Semiconductors
Series
TOPFET™r
Type
Low Sider
Datasheet
1.BUK1M200-50SGTD51.pdf
(15 pages)
Specifications of BUK1M200-50SGTD,51
Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
150 mOhm
Current - Output / Channel
1.3A
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
20-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Current - Peak Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057351518
Philips Semiconductors
9397 750 10955
Product data
Fig 10. Drain current trip threshold as a function of
Fig 12. Overtemperature protection characteristic;
I D(th)(trip)
(A)
T
V
T j(th)
j
200
( C)
190
180
170
160
DS
= 25 C; t
9
6
3
0
junction temperature; typical values.
threshold junction temperature as a function of
input-source voltage; typical values.
= 5 V; V
-50
0
p
IS
= 300 s
2
= 5 V; t
0
p
4
= 300 s
50
6
100
8
T j ( C)
V IS (V)
03pb 02
03pa76
150
10
Rev. 01 — 31 March 2003
Fig 11. Drain current trip threshold as a function of
Fig 13. Input-source threshold voltage as a function of
I D(th)(trip)
V IS(th)
(A)
T
T
(V)
j
j
2.5
1.5
0.5
= 25 C; V
= 25 C; V
9
6
3
0
2
1
0
input-source voltage; typical values.
junction temperature.
-50
0
BUK1M200-50SGTD
DS
DS
= 10 V; t
= 5 V; t
0
Quad channel logic level TOPFET
2
p
p
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
= 300 s
= 300 s
50
max.
typ.
min.
4
100
V IS (V)
T j ( C)
03pb 01
03pa77
150
6
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