BUK127-50DL,115 NXP Semiconductors, BUK127-50DL,115 Datasheet
BUK127-50DL,115
Specifications of BUK127-50DL,115
BUK127-50DL T/R
BUK127-50DL T/R
Related parts for BUK127-50DL,115
BUK127-50DL,115 Summary of contents
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... Total power dissipation D T Continuous junction temperature j R Drain-source on-state resistance DS(ON) FUNCTIONAL BLOCK DIAGRAM INPUT LOGIC AND PROTECTION Fig.1. Elements of the TOPFET. PIN CONFIGURATION Product specification BUK127-50DL MAX. UNIT 50 V 0.7 A 1.8 W 150 ˚C 200 m DRAIN CLAMP POWER MOSFET RIG SOURCE ...
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... CONDITIONS Human body model 250 pF 1.5 k CONDITIONS T 25˚C; I < D(lim) inductive load T 125˚ mA 250 Hz REQUIRED CONDITION CONDITIONS Mounted on any PCB Mounted on PCB of fig Product specification BUK127-50DL MIN. MAX. UNIT - 50 - self limiting - 1.8 -55 150 - 150 MIN. MAX. UNIT - 2 MIN. MAX. ...
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... 300 100 25˚C unless otherwise specified mb CONDITIONS normal operation; protection latched; 1 reset time t 100 < IS1 IS2 Product specification BUK127-50DL MIN. TYP. MAX 0. 100 = 25 ˚ 380 = 25 ˚C - 150 200 mb MIN. TYP. MAX. 0 25˚C 1.1 1.6 2 ...
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... DD D CONDITIONS CONDITIONS T 25 ˚ 25˚C unless otherwise specified mb CONDITIONS 300 not applicable according to the formula DSC D 4 Product specification BUK127-50DL MIN. TYP. MAX. UNIT 0.8 1.3 1.7 0 0 1.6 - 150 165 - MIN. TYP. MAX. UNIT - MIN. ...
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... R IS DS(ON) BUK127-50DL VIS / 25˚C. Fig.7. Typical transfer characteristics 300 f Product specification BUK127-50DL Normalised RDS(ON) = f(Tj 100 25˚ 100 mA; V DS(ON BUK127-50DL MAX. TYP VIS / V = 25˚ f(V ); conditions 100 mA VIS / V ); conditions 300 150 = 4 300 s BUK127-50DL 25˚C. j Rev 1.011 ...
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... Fig.13. Typical overload protection response time. 6 Product specification BUK127-50DL MAX. TYP. MIN 100 Fig.11. Input threshold voltage. = f(T ); conditions mA BUK127-50DL VIS / f(V ); normal operation 25˚ f 125˚C. dsc BUK127-50DL 150 = BUK127-50DL 45 50 Rev 1.011 ...
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... V L BUK127-50DL IDSS 100 -50 Fig.18. Typical drain source leakage current 300 DSS VDD VDS measure D.U. Product specification BUK127-50DL BUK127-50DL VDS VIS - 100 120 time / us to obtain I = 250 mA BUK127-50DL 0 50 100 f(T ); conditions 140 160 = 25˚C j 150 Rev 1.011 ...
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... Philips Semiconductors PowerMOS transistor Logic level TOPFET Zth j-amb / ( 1E+ 0.5 0.2 1E+01 0.1 0.05 0.02 1 1E-01 0 1E-02 1E-07 Fig.19. Transient thermal impedance, mounted on SOT223 PCB. October 2001 P D 1E-05 1E-01 1E- f(t); parameter j Product specification BUK127-50DL BUK127-50DL 1E+01 1E+03 Rev 1.011 ...
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... 0.32 6.7 3.7 7.3 1.1 0.95 4.6 2.3 0.22 6.3 3.3 6.7 0.7 0.85 REFERENCES JEDEC EIAJ SC-73 Fig.20. SOT223 surface mounting package 9 Product specification BUK127-50DL SOT223 detail 0.2 0.1 0.1 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09- Rev 1.011 ...
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... Fig.21. Soldering pattern for surface mounting. October 2001 PRINTED CIRCUIT BOARD Dimensions in mm. 60 6.3 Fig.22. PCB for thermal resistance and power rating. PCB: FR4 epoxy glass (1.6 mm thick), 10 Product specification BUK127-50DL Dimensions in mm 4.5 4 copper laminate (35 m thick). Rev 1.011 ...
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... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 11 Product specification BUK127-50DL Rev 1.011 ...