SI8441BB-D-IS Silicon Laboratories Inc, SI8441BB-D-IS Datasheet - Page 16

• Manufacturer Part Number: SI8441BB-D-IS
• Description: IC ISOLATOR 4CH 5.5V 16-SOIC
• Manufacturer: Silicon Laboratories Inc
• Series: ISOpror

Specifications of SI8441BB-D-IS

• Number Of Channels: 4
• Package / Case: 16-SOIC (0.300", 7.5mm Width)
• Inputs - Side 1/side 2: 3/1
• Isolation Rating: 2500Vrms
• Voltage - Supply: 2.7 V ~ 5.5 V
• Data Rate: 150Mbps
• Propagation Delay: 6ns
• Output Type: Tri-State
• Operating Temperature: -40°C ~ 125°C
• Mounting Style: SMD/SMT
• Propagation Delay Time: 6 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.7 V
• Supply Current: 6 mA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 336-1762-5

Si8440/41/42/45
Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings
Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB*
Table 10. IEC Safety Limiting Values
16
Parameter
Basic Isolation Group
Installation Classification
Parameter
Maximum Working Insulation Voltage
Input to Output Test Voltage
Transient Overvoltage
Pollution Degree (DIN VDE 0110, Table 1)
Insulation Resistance at T
*Note: Maintenance of the safety data is ensured by protective circuits. The Si84xx provides a climate classification of
Parameter
Case Temperature
Safety input, output, or
supply current
Device Power
Dissipation
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 3 and 4.
2. The Si844x is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square
40/125/21.
wave.
2
Symbol
S
, V
P
T
I
S
IO
S
D
= 500 V
V
I

= 5.5 V, T
JA
105 °C/W (NB SOIC-16),
Material Group
Rated Mains Voltages < 150 V
Rated Mains Voltages < 300 V
Rated Mains Voltages < 400 V
Rated Mains Voltages < 600 V
= 100 °C/W (WB SOIC-16),
1
Symbol
V
V
Test Condition
V
IORM
IOTM
R
PR
S
J
= 150 °C, T
Rev. 1.3
(V
Production Test, t
Partial Discharge < 5 pC)
Test Conditions
IORM
A
Test Condition
= 25 °C
x 1.875 = V
Method b1
t = 60 sec
RMS
RMS
RMS
RMS
Min Typ
—
—
—
m
PR
= 1 sec,
, 100%
—
—
—
SOIC-16
WB
150
220
275
Characteristic
Max
1050
4000
>10
560
2
Specification
SOIC-16
9
150
210
275
NB
I-IV
I-III
I-II
I-II
I
V peak
V peak
V peak
Unit
Unit
mW

mA
°C