TLP620(F,T) Toshiba, TLP620(F,T) Datasheet - Page 60

• Manufacturer Part Number: TLP620(F,T)
• Description: PHOTOCPLR AC IN TRANS-OUT 4-DIP
• Manufacturer: Toshiba

Specifications of TLP620(F,T)

• Number Of Channels: 1
• Input Type: AC, DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 50% @ ±5mA
• Current Transfer Ratio (max): 600% @ ±5mA
• Voltage - Output: 55V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Output Device: Transistor
• Number Of Elements: 1
• Forward Voltage: 1.3V
• Forward Current: 60mA
• Collector-emitter Voltage: 55V
• Package Type: PDIP
• Collector Current (dc) (max): 50mA
• Isolation Voltage: 5000Vrms
• Power Dissipation: 250mW
• Current Transfer Ratio: 600%
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Maximum Collector Emitter Voltage: 55 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Maximum Forward Diode Voltage: 1.3 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Maximum Fall Time: 3 us
• Maximum Input Diode Current: 60 mA
• Maximum Rise Time: 2 us
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP620F

9
The above operating life data are estimates extrapolated from long-term light output degradation over a single wafer lot and are shown as
reference only. Operating conditions exceeding the maximum ratings are not guaranteed.
10000000
1
1
1000000
100000
10000
140
120
100
140
120
100
GaAs LED Projected Light Output Degradation Data
GaAs LED Projected Operating Life Data
1000
Device Degradation
80
60
40
20
80
60
40
20
100
0
0
1
1
227
2.0
I
I
I
I
I
150
F
F
F
F
F
Failure criteria light output degradation Δ P O < –50%
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
10
10
100
Test conditions: I
Test conditions: I
85
3.0
60
100
100
Test time (h)
Test time (h)
25
F
F
= 50 mA, Ta = 40°C
= 10 mA, Ta = 40°C
0
1000
1000
I
F
4.0
= 10 mA
I
I
I
I
–30
F
F
F
F
= 20 mA
= 30 mA
= 40 mA
= 50 mA
Ambient Temperature (°C)
Projected F50%
operating life
Projected F0.1%
operating life
10000
10000
–50
X-3σ
X-3σ
1 / K (x10
X
X
–73
5.0
100000
100000
-3
)
60
10000000
1000000
100000
10000
140
120
100
1000
80
60
40
20
100
0
1
227
2.0
I
I
I
I
I
150
F
F
F
F
F
Failure criteria light output degradation Δ P O < –30%
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
10
100
Test conditions: I
85
3.0
60
100
Test time (h)
25
F
= 20 mA, Ta = 40°C
0
1000
4.0
I
I
I
I
I
F
F
F
F
F
–30
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
Ambient Temperature (°C)
Projected F50%
operating life
Projected F0.1%
operating life
10000
–50
X-3σ
1 / K (x10
X
–73
5.0
100000
-3
)