MT9VDDT6472AG-335D1 Micron Technology Inc, MT9VDDT6472AG-335D1 Datasheet - Page 17

• Manufacturer Part Number: MT9VDDT6472AG-335D1
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDT6472AG-335D1

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 167MHz
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1137

Table 16: DDR SDRAM Component Electrical Characteristics and
Notes: 1–5, 8, 12–15, 29, 31; notes appear on page 18–20; 0°C
pdf: 09005aef80a43e7d, source: 09005aef80a43d77
DDA9C16_32_64x72AG.fm - Rev. B 9/04 EN
AC CHARACTERISTICS
PARAMETER
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Recommended AC Operating Conditions (Continued)
DD
128MB, 256MB, 512MB (x72, ECC, SR), PC3200
128MB
256MB, 512MB
128MB
256MB, 512MB
17
SYMBOL
t
t
WPRES
t
t
t
t
t
t
t
WPRE
t
t
WPST
t
t
XSNR
XSRD
RPRE
REFC
T
RPST
t
WTR
RCD
RRD
REFI
VTD
t
WR
na
A
RP
+70°C; V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-Pin DDR SDRAM UDIMM
MIN
0.25
200
DD
0.9
0.4
0.4
15
15
10
15
75
0
2
0
t
QH -
= V
-40B
DD
t
DQSQ
Q = +2.6V ±0.1V
MAX
140.6
70.3
15.6
1.1
0.6
7.8
0.6
UNITS
t
t
t
t
t
t
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
µs
µs
ns
ns
CK
©2004 Micron Technology, Inc.
NOTES
18, 19
38
17
22
21
21